In this letter, a 400-nm-thick $\beta $ -Ga ₂ O ₃ nanomembrane is extracted from an n-Ga ₂ O ₃ -on-silicon wafer by wet etching, and then transferred to a p-GaN/ sapphire wafer by transfer-print technique to fabricate n-Ga ₂ O ₃ /p-GaN heterojunction diodes. X-ray photoelectron spectroscopy (XPS) measurement is used to accurately confirm that the valence-band offset of the heterojunction is 1.41± 0.07 eV. The diodes exhibit excellent electrical properties including high rectification ratio ( ${3.85}\times {10} ^{{6}}$ at ±5 V) and low reversed current density ( ${1.51}\times {10} ^{-{7}}\,\,\text{A}\cdot $ cm ⁻² at −5 V). The results show that the lift-off and transfer-print processes pave a new way for fabricating high-performance Ga ₂ O ₃ -based heterojunctions and bipolar devices.

中文翻译：

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湿蚀刻剥离和转移印刷技术论证n-Ga ₂ O ₃ / p-GaN二极管

在这封信中，一个400纳米的厚度 $ \ beta $ 通过湿法刻蚀从硅上n-Ga ₂ O ₃晶片上提取 -Ga ₂ O ₃纳米膜 ，然后通过转移印刷技术将其转移到p-GaN /蓝宝石晶片上，以制造n-Ga ₂ O ₃ /。 p-GaN异质结二极管。X射线光电子能谱（XPS）测量用于准确确认异质结的价带偏移为1.41±0.07 eV。二极管具有出色的电性能，包括高整流比（ $ {3.85} \ times {10} ^ {{6}} $ 在±5 V时）和低反向电流密度（ $ {1.51} \ times {10} ^ {-{7}} \，\，\ text {A} \ cdot $ ^-2在-5 V时为 cm ^-2）。结果表明，剥离和转移印刷工艺为制造高性能 基于Ga ₂ O ₃的异质结和双极器件铺平了新途径 。