We report one-volt TiO ₂ thin film transistors (TFTs) with a low-temperature fabrication process. The TFTs with the 300 °C-annealed TiO ₂ channel exhibit a high on/off current ratio ( $\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}})$ of $5.4\times 10^{7}$ , a low subthreshold swing (SS) of 75 mV/dec and a saturation field effect mobility ( $\mu _{{\mathrm {sat}}}$ ) of 2.13 cm $^{2}\cdot V^{-1}\cdot s^{-1}$ under an ultra-low voltage of 1 V. In contrast, the TFTs with the 200 °C-annealed TiO ₂ channel show no appreciable currents. Such a distinct conductivity difference is attributed to the crystallinity transformation of stoichiometric TiO ₂ , the charge transport of which can be well explained by the multiple-trapping-and-release (MTR) model. The channel/dielectric interfaces of these one-volt TiO ₂ TFTs are further investigated by transmission electron microscopy (TEM), multi-frequency ( ${f}$ ) capacitance-voltage (C-V), and conductance-voltage (G-V) measurements. The interface trap density ( $\text{D}_{{\mathrm {it}}}$ ) values of $\sim 5\times 10^{12}$ cm $^{-2}\cdot {\mathrm {eV}}^{-1}$ obtained from both C-V and G-V measurements are in good agreement, suggesting a high-quality channel/dielectric interface. These one-volt TiO ₂ TFTs show a great potential in emerging applications, such as foldable displays and wearable sensors, where a battery-powered operation is required.

中文翻译：

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低温工艺的一伏TiO 2薄膜晶体管

我们报告了低温制造工艺的一伏TiO ₂薄膜晶体管（TFT）。具有300°C退火的TiO ₂通道的TFT 表现出高的开/关电流比（ $ \ text {I} _ {\ mathrm {\ scriptscriptstyle ON}} / \ text {I} _ {\ mathrm {\ scriptscriptstyle OFF}}））$ 的 $ 5.4 \乘以10 ^ {7} $ ，75 mV / dec的低亚阈值摆幅（SS）和饱和场效应迁移率（ $ \ mu _ {{\\ mathrm {sat}}} $ ）2.13厘米 $ ^ {2} \ cdot V ^ {-1} \ cdot s ^ {-1} $ 相反，具有200°C退火TiO ₂通道的TFT 没有明显的电流。这种明显的电导率差异归因于化学计量的TiO ₂的结晶度转变 ，其电荷传输可以通过多次俘获-释放（MTR）模型很好地解释。这些一个伏TiO 2的信道/电介质界面 ₂ TFT通过透射电子显微镜（TEM），多频（进一步研究 $ {f} $ ）电容电压（CV）和电导电压（GV）测量。界面陷阱密度（ $ \ text {D} _ {{\ mathrm {it}}} $ ）的值 $ \ sim 5 \ times 10 ^ {12} $ 厘米 $ ^ {-2} \ cdot {\ mathrm {eV}} ^ {-1} $ 从CV和GV测量中获得的数据非常吻合，表明高质量的通道/介电界面。这些一伏的TiO ₂ TFT在新兴应用中显示出巨大的潜力，例如需要电池供电的可折叠显示器和可穿戴传感器。