All-CMOS monolithic microdisplay technologies have been attracting attention due to their direct integration of light-emitting pixel arrays and driving circuits on a single silicon substrate. Improvements to optical power efficiency have been a hot spot for all-silicon microdisplay technologies. MOS-like gate-control structure avalanche-mode light-emitting diodes (AMLEDs) that employ hot-carrier electroluminescence to produce light emission are used to enhance the optical power efficiency of pixel units. A semi-active matrix mode is used to reduce the power consumption of driver circuits. A $100\times 100$ pixel array with an all-CMOS monolithic microdisplay system is demonstrated using standard $0.18\mu \text{m}$ CMOS technology. The optical emission power and the breakdown voltage of the proposed AMLEDs are increased by 139.2% and reduced by more than 67%, respectively. The optical-power efficiency is $5.98\times 10 ^{{-7}}$ which is comparable to the best reported so far in all-CMOS monolithic microdisplay chip. With its significant optical-power efficiency, the proposed microdisplay technology has broad application prospects in near-to-eye display and head mounted displays (HMDs).

中文翻译：

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采用标准0.18的高效载流子电致发光的全硅微显示器μm CMOS技术

全CMOS单片微显示技术由于将发光像素阵列和驱动电路直接集成在单个硅基板上而备受关注。光功率效率的提高一直是全硅微显示技术的热点。使用热载流子电致发光来产生发光的类似MOS的栅极控制结构雪崩模式发光二极管（AMLED）用于提高像素单元的光功率效率。半有源矩阵模式用于减少驱动器电路的功耗。一个 $ 100 \次100 $ 使用标准演示了具有全CMOS单片微显示系统的像素阵列 $ 0.18 \ mu \ text {m} $ CMOS技术。提出的AMLED的光发射功率和击穿电压分别增加了139.2％和减少了67％以上。光功率效率为 $ 5.98 \次10 ^ {{-7}} $ 与迄今为止在全CMOS单片微显示芯片中报告的最好的产品相媲美。凭借其显着的光功率效率，所提出的微显示器技术在近眼显示器和头戴式显示器（HMD）中具有广阔的应用前景。