This letter demonstrates a high performance $\beta $ -Ga ₂ O ₃ solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO ₂ ) Gate Dielectric. The SBPT shows a high Photo-to-dark-current ratio ( PDCR ) of ${6.9}\times {10}^{{7}}$ , an ${I} _{\text {254 nm}}/ {I}_{\text {365 nm}}$ rejection ratio of ${6.0}\times {10}^{{7}}$ combined with an external quantum efficiency ( EQE ) of ${6.4}\times {10}^{{7}}$ %. In addition, benefit from stronger control capability of the HfO ₂ based gate structure, the fabricated SBPT reaches a record detectivity ( ${D} ^{\ast }$ ) of ${1.1}\times {10}^{{19}}$ Jones and ultrahigh responsivity ( ${R}$ ) of ${1.4}\times {10}^{{7}}$ A/W. Furthermore, short decay time ( $\tau _{\text {d}}$ ) is obtained to be as low as 16 ms. These outstanding properties indicate that SBPT is promising for the solar-blind detection.

中文翻译：

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高性能的β-Ga ₂ ø ₃太阳能盲金属-氧化物-半导体场效应光电晶体管随着氧化铪栅介质流程

这封信表现出很高的绩效 $ \ beta $ -Ga ₂ O ₃带有氧化Ha（HfO ₂ ）栅介电层的日盲金属-氧化物-半导体场效应光电晶体管（SBPT） 。SBPT显示出较高的光暗电流比（ PDCR ） 的 $ {6.9} \次{10} ^ {{7}} $ ， 一个 $ {I} _ {\ text {254 nm}} / {I} _ {\ text {365 nm}} $ 的剔除率 $ {6.0} \次{10} ^ {{7}} $ 结合外部量子效率（ 均衡器 ） 的 $ {6.4} \次{10} ^ {{7}} $ ％。此外，受益于基于HfO ₂的栅极结构的更强控制能力 ，所制造的SBPT达到了创纪录的检测率（ $ {D} ^ {\ ast} $ ） 的 $ {1.1} \次{10} ^ {{19}} $ 琼斯和超高响应度（ $ {R} $ ） 的 $ {1.4} \次{10} ^ {{7}} $ A / W。此外，衰减时间短（ $ \ tau _ {\ text {d}} $ ）的值可低至16 ms。这些出色的性能表明SBPT在太阳盲检测方面很有前途。