The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength of 1550 nm is the least loss band for transmission communication, and the study of photodetectors working at 1550 nm demonstrate special scientific and applied significances. GaSb has attracted tremendous attention in the field of photoelectric detection due to its suitbale band gap, high mobility, sensitivity, and good compatibility with modern microelectronics technology. In this work, a highly polarization-sensitive GaSb nanowire-based photodetectors under short-wave near-infrared photoelectric detection is achieved. The device has a good optical detection ability in the near-infrared band, and showed the responsivity up to 77.3 A/W with the external quantum efficiency of $6.18\times 10 ^{3}$ % (illumination intensity of 1.59 mW/mm ² ) under 1550 nm. Furthermore, obvious photocurrent anisotropy are investigated under the near-infrared band from 808 nm to 1550 nm. The largest dichroic ratio reaches 3.3 at 1550 nm. These results indicate that GaSb nanowire based photodetectors are not only promising candidates for NIR detection but also have promising potentials in polarization sensitive applications.

中文翻译：

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基于GaSb纳米线的短波近红外偏振敏感光电探测器

近红外（NIR）偏振光电探测器具有广泛的应用，包括物体识别。1550 nm的波长是传输通信的最小损耗带，对1550 nm工作的光电探测器的研究显示出特殊的科学和应用意义。GaSb具有合适的带隙，高迁移率，灵敏性以及与现代微电子技术的良好兼容性，因此在光电检测领域引起了极大的关注。在这项工作中，实现了在短波近红外光电检测下高度极化敏感的基于GaSb纳米线的光电探测器。该器件在近红外波段具有良好的光学检测能力，并在高达77.3 A / W的响应速度下具有外部量子效率，显示出了高达77.3 A / W的响应度。 $ 6.18 \次10 ^ {3} $ ％（ 1550nm下的照明强度为1.59mW / mm ²）。此外，研究了在808 nm至1550 nm的近红外波段下明显的光电流各向异性。最大二向色比在1550 nm处达到3.3。这些结果表明，基于GaSb纳米线的光电探测器不仅是近红外探测的有前途的候选者，而且在偏振敏感应用中也有广阔的前景。