Quantum dot (QD)-based optoelectronics have attracted significant interest for extensive applications due to their unique photo-functionalities such as excellent optical absorption coefficient, size-dependent bandgap tunability, and facile solution processability. However, the charge transfer correlation between surface functionalization and optoelectronic properties is still not clear. Here, we report highly photosensitive CdSe QDs/solution-processed amorphous oxide semiconductor hybrid phototransistors with highly efficient photo-induced charge carrier transport using molecular metal chalcogenide (MCC) ligands surface functionalization. Furthermore, we comprehensively investigated the photo-induced electron transfer characteristics with respect to various MCC ligands such as Sn $_{{2}}\,\,\text{S}_{{6}}^{{4-}}$ , Sn ₂ Se $_{{6}}^{{4-}}$ , and In ₂ Se $_{{4}}^{{2-}}$ . In particular, the interplay among photosensitive chelating MCC ligands of the QDs and trap-free optoelectronic performance of phototransistors was investigated. Compared to ${a}$ -IGZO thin-film transistors and oleic acid-based CdSe QDs/ ${a}$ -IGZO phototransistors, Sn $_{{2}}\,\,\text{S}_{ {6}}^{ {4-}}$ , Sn ₂ Se $_{ {6}}^{ {4-}}$ , and In ₂ Se $_{ {4}}^{ {2-}}$ -based CdSe QD/ ${a}$ -IGZO phototransistors exhibited ultrahigh photosensitivity of $8.3\times 10 ^{ {3}}$ AW ⁻¹ , $3.1\times 10 ^{ {2}}$ AW ⁻¹ , and $1.3\times 10 ^{ {4}}$ AW ⁻¹ , respectively, in a broad range of incident light power (0.34 mW cm ⁻² −11.8 mW cm ⁻² ).

中文翻译：

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量子点光电晶体管的表面功能化与光电特性之间的相关性

基于量子点（QD）的光电技术因其独特的光功能性（例如出色的光吸收系数，尺寸相关的带隙可调性和便捷的溶液可加工性）而引起了广泛的关注。但是，表面功能化和光电性能之间的电荷转移相关性仍然不清楚。在这里，我们报告高光敏CdSe QDs /溶液处理的非晶氧化物半导体混合光电晶体管，利用分子金属硫属元素化物（MCC）配体表面功能化，具有高效的光致电荷载流子传输。此外，我们全面研究了有关各种MCC配体（如Sn）的光诱导电子转移特性 $ _ {{2}} \，\，\ text {S} _ {{6}} ^ {{4-}} $ ，锡 ₂硒 $ _ {{6}} ^ {{4-}} $ 和In ₂ Se $ _ {{4}} ^ {{2-}} $ 。特别地，研究了QD的光敏螯合MCC配体与光电晶体管的无陷阱光电性能之间的相互作用。相比 $ {a} $ -IGZO薄膜晶体管和基于油酸的CdSe QD / $ {a} $ -IGZO光电晶体管，锡 $ _ {{2}} \，\，\ text {S} _ {{6}} ^ {{4-}} $ ，锡 ₂硒 $ _ {{6}} ^ {{4-}} $ 和In ₂ Se $ _ {{4}} ^ {{2-}} $ 基于CdSe的QD / $ {a} $ -IGZO光电晶体管表现出超高的光敏性 $ 8.3 \次10 ^ {{3}} $ AW ^-1 ， $ 3.1 \次10 ^ {{2}} $ AW ^-1 和 $ 1.3 \次10 ^ {{4}} $ 在宽的入射光功率范围（0.34mW cm ^-2 -11.8mW cm ^-2 ）下分别为 AW ^-1。