The gate-controlled quantum capacitance and the channel resistance play an important role in the performance of graphene field-effect transistors (GFETs). This paper experimentally verifies that the output phase of the graphene field-effect transistor changes under the influence of quantum capacitance and the channel resistance, which are controlled by the gate voltage. This phenomenon is theoretically analyzed, and a model is established to simulate the phase shift. The obtained simulation results of the model are in good agreement with the experimental results. This work reveals the influence of gate voltage variation on the phase characteristics of GFETs and provides a research basis for the application of GFETs in phase shifter and the establishment of the small-signal model.

中文翻译：

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栅控量子电容在石墨烯FET中引起的相移

栅极控制的量子电容和沟道电阻在石墨烯场效应晶体管（GFET）的性能中起着重要作用。本文通过实验验证了石墨烯场效应晶体管的输出相位在受栅极电压控制的量子电容和沟道电阻的影响下发生了变化。从理论上分析了这种现象，并建立了一个模拟相移的模型。模型的仿真结果与实验结果吻合良好。这项工作揭示了栅极电压变化对GFET的相位特性的影响，并为GFET在移相器中的应用和小信号模型的建立提供了研究基础。