A double-HZO (HfZrO ₂ ) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as $\vert {V}_{P/{E}}\vert = {5}$ V, 2-bit endurance > 10 ⁵ cycles and retention > 10 ⁴ s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

中文翻译：

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基于双HfZrO _2的多位铁电FET用于高密度非易失性存储器

实验证明了铁电厚度不同的双HZO（HfZrO ₂）FeFET（铁电FET） $ \ vert {V} _ {P / {E}} \ vert = {5} $ V，2位耐久性> 10 ⁵个周期，保持时间> 10 ⁴ s。插入绝缘体以分隔铁电层并避免单斜形成厚的Fe-HZO（铁电HZO）是增强MLC（多级电池）应用的MW（内存窗口）的有用方法。与单HZO相比，双HZO的ER（错误率）更低，并且显示出600倍的改进。堆叠的HZO FeFET具有作为高密度NVM（非易失性存储器）应用的MLC的潜力。