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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory
IEEE Electron Device Letters ( IF 4.1 ) Pub Date : 2021-02-19 , DOI: 10.1109/led.2021.3060589
C.-Y. Liao , K.-Y. Hsiang , F.-C. Hsieh , S.-H. Chiang , S.-H. Chang , J.-H. Liu , C.-F. Lou , C.-Y. Lin , T.-C. Chen , C.-S. Chang , M. H. Lee

A double-HZO (HfZrO 2 ) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as $\vert {V}_{P/{E}}\vert = {5}$ V, 2-bit endurance > 10 5 cycles and retention > 10 4 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory window) for MLC (multilevel cell) applications. Double-HZO has a lower ER (error rate) and shows a 600X improvement compared to single-HZO. The stacked HZO FeFET has potential as an MLC for high-density NVM (nonvolatile memory) applications.

中文翻译:

基于双HfZrO 2的多位铁电FET用于高密度非易失性存储器

实验证明了铁电厚度不同的双HZO(HfZrO 2)FeFET(铁电FET) $ \ vert {V} _ {P / {E}} \ vert = {5} $ V,2位耐久性> 10 5个周期,保持时间> 10 4 s。插入绝缘体以分隔铁电层并避免单斜形成厚的Fe-HZO(铁电HZO)是增强MLC(多级电池)应用的MW(内存窗口)的有用方法。与单HZO相比,双HZO的ER(错误率)更低,并且显示出600倍的改进。堆叠的HZO FeFET具有作为高密度NVM(非易失性存储器)应用的MLC的潜力。
更新日期:2021-03-26
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