Nanoindentations carried out by a "virtual plasma indenter" has been proposed in this study to solve the plasma etchings of Si wafer and determine the deep trench isolation (DTI) profile with a high accuracy. The methods of finding the virtual Gaussian-like indenter profiler and the back load applied to the back surface of indenter corresponding to the given etching conditions have been developed. The values of these two controlling factors in combination with the ANSYS/LS-DYNA software and the Johnson-Cook (J-C) fracture model allow us to solve the DTI profiles formed at various penetration depths. Good agreement between the experimental and simulational DTI profiles has been achieved and the efficiency and validity of the models developed for various etching conditions have been confirmed. From the analyses by the present models, the real dominant controlling factors for the geometries of DTI structure can be identified clearly, and the choices in the plasma etching conditions for the desired DTI geometries become easy and efficient. The present models can provide us an efficient way to determine the etching conditions required for the fabrication of a desired DTI structure with a high accuracy.

在这项研究中提出了由“虚拟等离子压头”进行的纳米压痕，以解决对硅晶片的等离子蚀刻，并以高精度确定深沟槽隔离（DTI）轮廓。已经开发了找到虚拟高斯型压头轮廓仪和与给定蚀刻条件相对应的施加到压头背面的背载荷的方法。将这两个控制因素的值与ANSYS / LS-DYNA软件和Johnson-Cook（JC）裂缝模型结合使用，可以解决在不同穿透深度形成的DTI剖面。已在实验和模拟DTI轮廓之间达成了良好的协议，并且已经确认了针对各种蚀刻条件开发的模型的效率和有效性。根据目前模型的分析，可以清楚地识别出DTI结构的几何形状的真正主要控制因素，并且针对所需DTI几何形状的等离子刻蚀条件的选择变得容易和有效。本模型可以为我们提供一种有效的方法来确定高精度制造所需DTI结构所需的蚀刻条件。