In this work, a large size x-ray detector with a 25 mm² active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4 × 10⁴ μC Gy⁻¹ cm⁻², good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray photons is further realized with energy resolutions of 1.1 and 4.9 keV at 5.9 and 59.5 keV, respectively. This work thus suggests the significant potentials of wide-bandgap SiC semiconductor for photon-resolved x-ray detection in a harsh environment.

中文翻译：

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基于4H-SiC引脚结构并具有80μm厚本征层的高灵敏度X射线探测器

在这项工作中，基于厚的4H-SiC引脚结构，展示了一个具有25 mm ²有效面积的大型X射线探测器。所述检测器超过4×10表现出高的光子的敏感性明显的优点⁴ μ Ç戈瑞^-1 厘米^-2，良好的光子响应的线性度，以及高温操作的兼容性。同时，由于实现了超低的泄漏电流水平，进一步实现了x射线光子的单光子检测性能，在5.9和59.5 keV时的能量分辨率分别为1.1和4.9 keV。因此，这项工作表明宽带隙SiC半导体在恶劣环境下具有光子分辨X射线检测的巨大潜力。