In this paper, we present results on optimization of photoresist (PR) plating molds for patterning of a nickel masking layer. The process can be adopted in a number of processes, including deep reactive ion etching of strongly bonded materials with high chemical resistance, such as fused silica (FS), borosilicate glass, and silicon carbide. The desirable plating mold attributes, such as thick PR, controlled dimension, vertical sidewall angle, and low sidewall roughness were optimized by varying exposure dose, exposure contact mode, developer dilution ratio, and PR type. We demonstrated that the PR dimensions decrease proportionally to increase of the exposure dose, where the relationship was utilized to control fabricated dimensions. To improve the sidewall angle, lowering the exposure dose was shown to reduce sidewall tapering, with further improvements possible by applying the vacuum contact exposure mode. Furthermore, we showed that by using a chemically enhanced PR, such as AZ®12XT, smooth PR sidewalls can be attained. The benefits of optimizing PR features were verified through an FS etch experiment and demonstrated a vertical etch with controlled dimension, smooth sidewall, and reduced faceting.

中文翻译：

---

用于金属掩模构图的光刻胶电镀模具制造的优化

在本文中，我们提出了对用于镍掩膜层构图的光刻胶（PR）电镀模具进行优化的结果。该方法可以在许多方法中采用，包括对具有高耐化学性的强结合材料进行深度反应离子刻蚀，例如熔融石英（FS），硼硅酸盐玻璃和碳化硅。通过改变曝光剂量，曝光接触方式，显影剂稀释率和PR类型，可以优化所需的电镀模具属性，例如厚PR，受控尺寸，垂直侧壁角度和低侧壁粗糙度。我们证明了PR尺寸与暴露剂量的增加成比例地减小，其中关系被用来控制制造尺寸。为了改善侧壁角度，降低曝光剂量可减少侧壁锥度，通过应用真空接触曝光模式可以实现进一步的改进。此外，我们表明，通过使用化学增强的PR，例如AZ®12XT，可以获得平滑的PR侧壁。通过FS蚀刻实验验证了优化PR功能的好处，并展示了具有可控尺寸，平滑侧壁和减少刻面的垂直蚀刻。