Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered a solution. In this article, we study size-dependent effects on the dopant activation in nanometer-wide Si fins using a novel correlative approach. We start by showing that the micro four-point probe technique can be used to precisely measure the resistance of B doped and (laser) annealed Si fins. Next, we use transmission electron microscopy and scanning spreading resistance microscopy to show that the observed width dependence of the apparent sheet resistance of these fins can be explained by either a partially or a fully inactive region forming along the top of the fin sidewalls according to the annealing conditions.

中文翻译：

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表观尺寸对纳米硅鳍片中掺杂剂活化的影响

由于近来技术节点中器件功能的急剧缩减，表征这些结构的电性能变得越来越具有挑战性，因为它经常需要能够高精度地探测掺杂物和载流子浓度的局部变化的计量学。由于没有一种现有技术能够满足所有要求，因此通常将相关计量方法视为一种解决方案。在本文中，我们使用一种新型的相关方法研究了纳米尺寸Si鳍片中掺杂剂活化的尺寸依赖性效应。我们首先展示了微型四点探针技术可用于精确测量掺B和（激光）退火的Si鳍片的电阻。下一个，