Phosphorous Diffusion Gettering of Trapping Centers in Upgraded Metallurgical-Grade Solar Silicon,Physica Status Solidi-Rapid Research Letters

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Phosphorous Diffusion Gettering of Trapping Centers in Upgraded Metallurgical-Grade Solar Silicon
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-03-26 , DOI: 10.1002/pssr.202100054
Sergio Catalán-Gómez ₁ , Nerea Dasilva-Villanueva ₁ , David Fuertes Marrón ₁ , Carlos del Cañizo ₁

Affiliation

Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime measurements carried out on upgraded metallurgical-grade silicon (UMG-Si) wafers. The presence of trapping species dominating the long time range of the PC decay of UMG material (slow traps), which is effectively removed after a PDG conducted at 780 °C, is detected. Notwithstanding, a second trapping mechanism, characterized by a shorter time constant, still governs the response at very low injection levels after the gettering. Furthermore, the beneficial effect of the PDG is studied as a function of processing time, showing minority carrier bulk lifetime improvements up to 18-fold, up to the range of 70 μs. Thereby, the way for developing gettering strategies capable of successfully removing trap centers and improving the bulk lifetime of unconventional Si material is paved.

中文翻译：

升级冶金级太阳能硅中捕集中心的磷扩散吸气

实验证据表明磷扩散吸气剂 (PDG) 在减少俘获中心方面的有益影响，如通过在升级的冶金级硅 (UMG-Si) 上进行的电感耦合光电导 (PC) 衰减和寿命测量所观察到的) 晶片。检测到在 780 °C 下进行 PDG 后有效去除 UMG 材料（慢速陷阱）PC 衰减的长时间范围内的俘获物种的存在。尽管如此，以较短时间常数为特征的第二种捕集机制仍然在吸气后在非常低的注入水平下控制响应。此外，研究了 PDG 的有益效果作为处理时间的函数，显示少数载流子体寿命提高了 18 倍，范围可达 70 μs。从而，

更新日期：2021-03-26

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