Hafnia thin films have been under intensive research during the past few years due to its robust ferroelectricity under very thin limit and good compatibility with silicon. The polar crystal structure critical to ferroelectricity in hafnia thin films is metastable, and is generally obtained in polycrystalline thin films, coexisting with other nonpolar phases. Recently, much attention has been focused on epitaxial ferroelectric hafnia thin films to get rid of the nonpolar phases, to investigate the more intrinsic factors to ferroelectricity, and its potential applications. Herein, recent progress on the growth of epitaxial hafnia thin films is reviewed. The epitaxial growth mechanism is explored, in particular, the interface matching, phase stability under temperature and oxygen pressure, followed by discussions on thickness dependency of ferroelectricity, and wake‐up effect in hafnia. Finally, an outlook on ferroelectric hafnia both on fundamental studies and future applications is discussed.

中文翻译：

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铁电氧化f和外延生长的概述

Hafnia薄膜由于在非常薄的极限下具有强大的铁电性以及与硅的良好相容性而在过去的几年中受到了广泛的研究。在氧化f薄膜中对铁电至关重要的极性晶体结构是亚稳态的，通常是在多晶薄膜中与其他非极性相共存的。近年来，人们将许多注意力集中在外延铁电氧化f薄膜上，以摆脱非极性相，研究铁电的更多内在因素及其潜在应用。在此，回顾了外延氧化f薄膜的生长的最新进展。探索了外延生长机制，特别是界面匹配，温度和氧气压力下的相稳定性，随后讨论了铁电的厚度依赖性以及氧化铁的唤醒效应。最后，讨论了铁电氧化and的基础研究和未来应用前景。