当前位置：
X-MOL 学术
›
Phys. Status Solidi A
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Effect of Halogen-Doping on Properties of Bismuth Iodide (BiI3) Optical Absorption Layer
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-24 , DOI: 10.1002/pssa.202000740 Hao Wu 1 , Xianli Huang 1 , Jun Lv 1 , Lei Sheng 1 , Bin Gao 1 , Cheng Jiang 1 , Tao Wang 1 , Jianping He 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-24 , DOI: 10.1002/pssa.202000740 Hao Wu 1 , Xianli Huang 1 , Jun Lv 1 , Lei Sheng 1 , Bin Gao 1 , Cheng Jiang 1 , Tao Wang 1 , Jianping He 1
Affiliation
|
Bismuth tri-iodide (BiI3), a promising lead-free photoelectric semiconductor material, is suitable for photovoltaic applications. Herein, the effect of halogen doping with bromine (Br) and chlorine (Cl) compounds on the morphology and photovoltaic performances of BiI3 thin films is investigated. BiI3−xXx films doped with halogens are prepared by vacuum thermal evaporation. Scanning electron microscope (SEM) shows that with the increase in doping ratio, the morphology of the thin film changes significantly, which is conducive to the contact with the cavity conduction layer. The bandgap increases from ≈1.75 to 1.78 eV (BiI2.91Cl0.09) and 2.06 eV (BiI2.91Br0.09) after doping. X-ray photoelectron spectroscopy (XPS) shows that the band position of the two doped films increases, which is more conducive to the realization of band matching. The films with higher properties are obtained by doping halogens, and the maximum (BiI2.91X0.09) photocurrent is twice of the minimum (BiI2.97X0.03). The maximum photocurrent obtained by photocurrent I–T test is 0.043 Ma cm−2 (BiI2.91Cl0.09) and 0.047 mA cm−2 (BiI2.91Br0.09).
中文翻译：
卤素掺杂对碘化铋 (BiI3) 光吸收层性能的影响
三碘化铋（BiI 3）是一种很有前途的无铅光电半导体材料，适用于光伏应用。在此，研究了溴（Br）和氯（Cl）化合物的卤素掺杂对BiI 3薄膜的形貌和光伏性能的影响。BiI 3- x X x掺杂卤素的薄膜是通过真空热蒸发制备的。扫描电镜（SEM）表明，随着掺杂比例的增加，薄膜的形貌发生了显着变化，有利于与腔体导电层的接触。带隙从 ≈1.75 增加到 1.78 eV (BiI 2.91 Cl 0.09 ) 和 2.06 eV (BiI 2.91Br 0.09 ) 掺杂后。X射线光电子能谱（XPS）表明，两种掺杂薄膜的能带位置增加，更有利于实现能带匹配。通过掺杂卤素获得更高性能的薄膜，最大（BiI 2.91 X 0.09）光电流是最小值（BiI 2.97 X 0.03）的两倍。通过光电流I - T测试获得的最大光电流为0.043 Ma cm -2 (BiI 2.91 Cl 0.09 )和0.047 mA cm -2 (BiI 2.91 Br 0.09 )。
更新日期：2021-03-24
中文翻译：
卤素掺杂对碘化铋 (BiI3) 光吸收层性能的影响
三碘化铋（BiI 3）是一种很有前途的无铅光电半导体材料，适用于光伏应用。在此，研究了溴（Br）和氯（Cl）化合物的卤素掺杂对BiI 3薄膜的形貌和光伏性能的影响。BiI 3- x X x掺杂卤素的薄膜是通过真空热蒸发制备的。扫描电镜（SEM）表明，随着掺杂比例的增加，薄膜的形貌发生了显着变化，有利于与腔体导电层的接触。带隙从 ≈1.75 增加到 1.78 eV (BiI 2.91 Cl 0.09 ) 和 2.06 eV (BiI 2.91Br 0.09 ) 掺杂后。X射线光电子能谱（XPS）表明，两种掺杂薄膜的能带位置增加，更有利于实现能带匹配。通过掺杂卤素获得更高性能的薄膜，最大（BiI 2.91 X 0.09）光电流是最小值（BiI 2.97 X 0.03）的两倍。通过光电流I - T测试获得的最大光电流为0.043 Ma cm -2 (BiI 2.91 Cl 0.09 )和0.047 mA cm -2 (BiI 2.91 Br 0.09 )。
京公网安备 11010802027423号