Effect of Light and Heat on Polymer-Based Resistive Random Access Memory,Physica Status Solidi-Rapid Research Letters

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Effect of Light and Heat on Polymer-Based Resistive Random Access Memory
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-03-24 , DOI: 10.1002/pssr.202100050
Bipul Kumar Mahato ₁ , Rohit Medwal ₁ , G. Roshan Deen ₂ , S. N. Piramanayagam ₃ , Rajdeep Singh Rawata ₁

Affiliation

Highly repeatable, photosensitive nonvolatile resistive random access memory (ReRAM) made of a Si/SiO₂/Cu/PRPC/Ta stack with a photoresponsive polymer composite (PRPC) as the active medium is presented. The device shows errorless bipolar resistive switching with more than 100 cycles repeatability and stable SET and RESET voltages. It changes its resistive states in response to white light and recovers completely after removal of the light source. It also changes its state in response to heat and recovers randomly after the removal of the heat source. The phenomenon is explained by valance charge transfer along with a space-charge-limited conduction (SCLC) mechanism. The initial state of the device is low resistance state (LRS) because of electric-field-induced formation of valance charge transfer states. It switches to a high resistance state (HRS) due to electric-field-induced dissociation of the charge transfer states.

中文翻译：

光和热对基于聚合物的电阻式随机存取存储器的影响

由 Si/SiO ₂制成的高度可重复的光敏非易失性电阻随机存取存储器 (ReRAM)/Cu/PRPC/Ta 堆叠以光响应聚合物复合材料 (PRPC) 作为活性介质。该器件显示出无错误的双极电阻开关，具有超过 100 个循环的重复性和稳定的 SET 和 RESET 电压。它响应白光而改变其电阻状态，并在移除光源后完全恢复。它还响应热量改变其状态，并在移除热源后随机恢复。这种现象可以通过价电荷转移以及空间电荷限制传导 (SCLC) 机制来解释。由于电场诱导形成价电荷转移状态，因此器件的初始状态是低电阻状态 (LRS)。由于电荷转移状态的电场诱导解离，它切换到高电阻状态 (HRS)。

更新日期：2021-03-24

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