当前位置: X-MOL 学术Micro Nanostruct. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Modeling of GaAsxP1-x/CIGS tandem solar cells under stress conditions
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2021-03-16 , DOI: 10.1016/j.spmi.2021.106860
Iman Gharibshahian , Abdollah Abbasi , Ali A. Orouji

In this paper, we design a four-terminal gallium arsenide phosphide (GaAsxP1-x)/copper indium gallium selenide (CIGS) tandem solar cell by the analytical model. We used the experimental data for GaAsxP1-x and CIGS cells to validate this model. In this work, we achieved a 30% efficiency for the optimum GaAsxP1-x/CIGS tandem solar cell. Our proposed model determines the optimized bandgap of GaAsxP1-x as the top cell is within the range from 1.79 eV to 1.95 eV (0.57<x < 0.7). Next, we investigate the degradation in the performance parameters of our tandem solar cell, considering the aging time under stress conditions. In this condition, the defect density increases exponentially over time, and the depletion width decreases with time. The results show that for an optimal GaAs0.6P0.4/CIGS tandem structure, after 277 h (t = 106 s), efficiency decreases by 35.6% under stress conditions. Improving the stability of GaAs0.6P0.4/CIGS tandem solar cell makes this configuration a greater potential to be used in space applications.



中文翻译:

GaAs x P 1-x / CIGS串联太阳能电池在应力条件下的建模

在本文中,我们通过分析模型设计了四端磷化砷化镓(GaAs x P 1-x)/硒化铜铟镓(CIGS)串联太阳能电池。我们使用GaAs x P 1-x和CIGS电池的实验数据来验证该模型。在这项工作中,我们为最佳GaAs x P 1-x / CIGS串联太阳能电池实现了30%的效率。我们提出的模型确定了GaAs x P 1-x的最佳带隙因为顶部电池在1.79 eV至1.95 eV的范围内(0.57 <x <0.7)。接下来,考虑到应力条件下的老化时间,我们研究了串联太阳能电池性能参数的下降。在这种情况下,缺陷密度随时间呈指数增长,耗尽宽度随时间而减小。结果表明,对于最佳的GaAs 0.6 P 0.4 / CIGS串联结构,在277 h(t = 10 6  s)后,在应力条件下效率降低了35.6%。改善GaAs 0.6 P 0.4 / CIGS串联太阳能电池的稳定性使该配置具有更大的潜力,可用于空间应用。

更新日期:2021-03-23
down
wechat
bug