Abstract—Studies have been carried out and a technology has been developed for the formation of a separating mesa structure in fabrication of multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure. Methods for etching of the heterostructure layers have been studied: wet chemical etching in compositions based on HBr, K₂Cr₂O₇, and H₂O and the plasmachemical etching in a flow of the BCl₃ working gas. A comparative analysis of the etching methods was made. Protective masks based on a photoresist layer and TiO_x/SiO₂ were developed. Multi-junction solar cells with low leakage current (less than 10^–7 A at a voltage of 0.5–1 V) were fabricated.

摘要—在GaInP / GaInAs / Ge异质结构的基础上，已经进行了研究并开发了用于形成多结太阳能电池的分离台面结构的技术。已经研究了用于蚀刻异质结构层的方法：在基于HBr，K ₂ Cr ₂ O ₇和H ₂ O的组合物中进行湿法化学蚀刻，以及在BCl ₃工作气体流中进行等离子体化学蚀刻。对蚀刻方法进行了比较分析。开发了基于光致抗蚀剂层和TiO _x / SiO _2的保护掩模。低泄漏电流（小于10 ^–7的多结太阳能电池 在0.5-1 V的电压下制作了A）。