A novel conceptual structure for field-effect transistors with its time domain analysis is introduced. This new structure considers all drain, gate, and source electrodes to be CRLH transmission lines, thereby resulting an active multi-conductor CRLH transmission line, which is a new design of transistors with novel characteristics. Time domain analysis of this new structure is based on a fully distributed finite-difference-time-domain (FDTD) algorithm in the leap-frog format. Such an algorithm was used just for passive CRLH transmission lines. However, by applying some changes on the algorithm, it can be implemented on the mentioned active transmission line types. Amplification matrix of the proposed algorithm is obtained to evaluate its numerical stability. Next, the algorithm is applied to a $0.15\times 75\mathrm{\mu }\text{m}$ pHEMT model transistor with designed values of its left-handed elements, and then, the obtained results are verified by a comparison with semi-distributed simulation on Agilent ADS software. Finally, s-parameter analysis show that this new idea can improve gain, bandwidth, and stability of a transistor.

介绍了一种新颖的场效应晶体管的概念结构及其时域分析。这种新结构将所有漏极，栅极和源极电极都视为CRLH传输线，从而形成了有源多导体CRLH传输线，这是具有新颖特性的晶体管的新设计。这种新结构的时域分析基于跨越式格式的完全分布式有限差分时域（FDTD）算法。这种算法仅用于无源CRLH传输线。但是，通过对算法进行一些更改，可以在上述有源传输线类型上实现该算法。获得了该算法的放大矩阵，以评估其数值稳定性。接下来，将该算法应用于$0.15\times 75\mathrm{\mu }\text{米}$pHEMT模型晶体管具有左手元素的设计值，然后，通过与Agilent ADS软件上的半分布式仿真进行比较，来验证所获得的结果。最后，S参数分析表明，这种新思路可以提高晶体管的增益，带宽和稳定性。