Tantalum pentoxide (Ta₂O₅) has attracted intensive attention due to their excellent physicochemical properties. Ta₂O₅ films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 °C. X-ray diffraction (XRD) results show that amorphous Ta₂O₅ thin films form from 300 to 700 °C and then a phase transition to polycrystalline β-Ta₂O₅ films occurs since 900 °C. The surface morphology of the Ta₂O₅ films is uniform and smooth. The resulted Ta₂O₅ films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta₂O₅ films is broadened from 4.32 to 4.46 eV by annealing. The 900 °C polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.

五氧化_二钽（Ta ₂ O ₅）由于其优异的物理化学性能而引起了广泛的关注。通过电子束蒸发（EBE）合成Ta ₂ O ₅膜，然后在300至900°C的不同温度下进行退火。X射线衍射（XRD）结果表明，无定形的Ta ₂ ö ₅薄膜从300至700℃，然后相变形成多晶β-TA _2层ö ₅膜900以来发生℃。Ta ₂ O ₅膜的表面形态均匀且光滑。结果Ta ₂ O ₅薄膜在300至1100 nm的波长范围内均具有出色的透射特性。通过退火，Ta ₂ O ₅膜的带隙从4.32扩大到4.46eV。与其他无定形对应物相比，900°C的多晶膜电极具有更高的电化学稳定性。