In this article, the polyimide (PI) composite films with synergistically improving thermal conductivity were prepared by adding a few graphene nanoplatelets (GNP) and various hexagonal boron nitride (h-BN) contents into the PI matrix. The thermal conductivity of PI composite film with 1 wt% GNP and 30 wt% h-BN content was 1.21 W(m·k)^{− 1}, which was higher than that of the PI composite film with 30 wt% h-BN content (0.45 W(m·k)^{− 1}), the synergistic efficiency of GNP under various h-BN content (10 wt%, 20 wt%, and 30 wt%) were 1.70, 2.71, and 3.09, respectively. And it was found that the increased h-BN content can suppress the dielectric properties caused by GNP in the matrix. The dielectric permittivity and dielectric loss tangent of 1 wt% GNP/PI composite film were 10.69, 0.661 at 10³ Hz, respectively, and that of the 30 wt% h-BN + GNP/PI composite film were 4.29 and 0.1367, respectively. Moreover, the mechanical properties of the PI composite film were suitable for practical applications. And the heat resistance index and the residual rate at 700°C of PI composite film increased to 326.8°C, 74.43%, respectively, and these of PI film were 292.6°C and 59.26%. Thus, it may provide a reference value for applying the filler hybridization/PI film in the electronic packaging materials.

在本文中，通过将少量石墨烯纳米片（GNP）和各种六方氮化硼（h-BN）含量添加到PI基质中，制备出具有协同提高的导热性的聚酰亚胺（PI）复合膜。PI复合膜的具有1wt％GNP和30％（重量）的h-BN的内容的热传导率为1.21 W（米·K）^{- 1}，这比用30％（重量）的h-BN内容的PI复合膜的更高（ 0.45瓦（m·k）^{− 1}），在各种h-BN含量（10 wt％，20 wt％和30 wt％）下，GNP的协同效率分别为1.70、2.71和3.09。并且发现增加的h-BN含量可以抑制由基质中的GNP引起的介电性能。1 wt％GNP / PI复合薄膜的介电常数和介电损耗正切为10 ^3时的10.69、0.661Hz和30wt％的h-BN + GNP / PI复合膜的Hz分别为4.29和0.1367。而且，PI复合膜的机械性能适合于实际应用。PI复合膜的耐热指数和700℃下的残留率分别提高到326.8℃，74.43％，PI膜的耐热指数和残余率分别为292.6°C和59.26％。因此，它可以为在电子包装材料中应用填料杂化/ PI膜提供参考价值。