The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based on the literature sources published mainly in the last 10 years. The doping was carried out by various methods: during the material growth (molecular beam epitaxy, magnetron sputtering, discharge techniques) or by implantation into the grown material. The presented theoretical and experimental data show that AlN doped with transition metal group atoms has ferromagnetic properties at temperatures above room temperature and is a promising material for spintronics.

中文翻译：

---

掺杂过渡金属族原子的氮化铝作为自旋电子学的材料

介绍了有关过渡金属族原子掺杂的AlN的电学和磁学性质的科学文献的概述。该综述基于主要是最近十年中发表的文献资源。掺杂通过各种方法进行：在材料生长期间（分子束外延，磁控溅射，放电技术）或通过注入到生长的材料中。所提供的理论和实验数据表明，掺有过渡金属族原子的AlN在高于室温的温度下具有铁磁性能，并且是自旋电子学的有前途的材料。