Refractory tungsten(W) materials are widely used in high-temperature field due to their high melting point. But there are some problems with W, such as low strength and poor toughness. The grain boundaries are very sensitive to impurities, which is one of the most important reasons for the degradation of tungsten properties. In this paper, we use silicon carbide (SiC) as a deoxidizer, which is designed to react with the oxygen atoms in tungsten at high temperature to purify and strengthen the grain boundaries. The effects of SiC addition on the sintering densification, microstructure and mechanical properties of W were investigated. Results show that SiO₂ and W₂C are produced by the interface reaction between SiC and W, which reduces the free energy of sintering system and promotes the densification process, the maximum relative density reaches 99.4%. When SiC content is 1 wt%, compared to pure tungsten, the tensile strength significantly increases from 220 MPa to 431 MPa, the hardness increases up to 697.13 HV. Furthermore, the fracture mode of this W is mainly transgranular fracture, which is due to interface reaction strengthening and purification grain boundary strengthening.

难熔钨（W）材料因其高熔点而被广泛应用于高温领域。但是W有一些问题，例如强度低和韧性差。晶界对杂质非常敏感，这是导致钨性能下降的最重要原因之一。在本文中，我们使用碳化硅（SiC）作为脱氧剂，其设计目的是在高温下与钨中的氧原子反应，以纯化和增强晶界。研究了SiC添加对W的烧结致密化，组织和力学性能的影响。结果表明，SiO ₂和W ₂C是由SiC和W之间的界面反应产生的，这降低了烧结系统的自由能并促进了致密化过程，最大相对密度达到99.4％。当SiC含量为1 wt％时，与纯钨相比，抗拉强度从220 MPa显着增加到431 MPa，硬度增加到697.13 HV。此外，该W的断裂模式主要是经晶断裂，这是由于界面反应强化和晶界强化的缘故。