ABSTRACT

We investigate the effects of a time-dependent gate voltage on a spin–orbit interaction (SOI) coupled interacting double quantum dot (DQD) system. For a tunnel coupled detuned DQD with two interacting electrons, SOI couples triplet $T_0$ and hybridised singlet state (1,1)–(0,2) through spin nonconserving transition. In order to explore the effects of Ac gate voltage on charge localisation, we initiate the system in the vicinity of the singlet–triplet avoided crossing and investigate the interplay of the Ac gate voltage and SOI on the charge and spin dynamics of the system. We show that the triplet state (1,1) charge configuration can be frozen by tuning the Ac frequency leading to charge localisation and dynamical spin locking with a redefined spin–orbit field in terms of gate voltage.

摘要

我们研究了与时间有关的栅极电压对自旋轨道相互作用（SOI）耦合相互作用的双量子点（DQD）系统的影响。对于具有两个相互作用电子的隧道耦合失谐DQD，SOI耦合三重态${Ť}_0$通过自旋非保守跃迁混合单峰态（1,1）–（0,2）。为了探索交流栅极电压对电荷局部化的影响，我们在单重态-三重态避免交叉的附近启动系统，并研究交流栅极电压和SOI对系统电荷和自旋动力学的相互作用。我们表明，可以通过调节AC频率来冻结三重态（1,1）的电荷配置，从而导致电荷定位和动态自旋锁定，并根据栅极电压重新定义自旋轨道场。