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Bandgap Tailoring of Monoclinic Single-Phase β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β-Ga2O3/Al2O3 Heterojunction at High Temperatures
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-18 , DOI: 10.1002/pssa.202000785 Zhengcheng Li 1, 2 , Ying Wu 1 , Boyuan Feng 1, 2 , Yao Li 1, 2 , Tong Liu 1 , Jiagui Feng 1 , Xiao Chen 1 , Rong Huang 1 , Leilei Xu 1 , Zhiyun Li 1 , Nan Hu 1 , Fangsen Li 1 , Zhitai Jia 3 , Gang Niu 4 , Qixin Guo 5 , Gaohang He 1 , Sunan Ding 1, 2
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-18 , DOI: 10.1002/pssa.202000785 Zhengcheng Li 1, 2 , Ying Wu 1 , Boyuan Feng 1, 2 , Yao Li 1, 2 , Tong Liu 1 , Jiagui Feng 1 , Xiao Chen 1 , Rong Huang 1 , Leilei Xu 1 , Zhiyun Li 1 , Nan Hu 1 , Fangsen Li 1 , Zhitai Jia 3 , Gang Niu 4 , Qixin Guo 5 , Gaohang He 1 , Sunan Ding 1, 2
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Herein, bandgap tuning of monoclinic (−201)-oriented β-(AlxGa1−x)2O3 thin films is achieved through a β-Ga2O3/Al2O3 heterojunction by a feasible annealing process with an O2 atmosphere. During the annealing process, Al atoms of the Al2O3 substrate outdiffuse easily into the β-Ga2O3 thin film deposited by ozone-assisted molecular beam epitaxy (OMBE). The Al compositions in the β-(AlxGa1−x)2O3 samples are tuned through adjusting the annealing temperature from 800 to 1300 °C and experimentally determined from the result of X-ray photoelectron spectroscopy (XPS) measurements combined with Vegard's law. Successive Al-composition-gradient β-(AlxGa1−x)2O3 thin films with controlled bandgap are constructed. On these bases, β-Ga2O3 thin films are deposited on β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) substrates through OMBE, yielding β-Ga2O3/β-(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) heterojunction structures, and the band offsets of this heterojunction are determined by XPS accordingly. This methodology to achieve high-quality β-(AlxGa1−x)2O3 thin films with adjustable Al composition and tunable band offsets of the β-Ga2O3/β-(AlxGa1−x)2O3 interface will provide guidance for potential strategies to develop and fabricate β-(AlxGa1−x)2O3-based deep-UV photodetectors and power devices.
中文翻译：
β-Ga2O3/ Al2O3异质结高温退火对单斜β-（AlxGa1-x）2O3（0≤x≤0.65）薄膜的带隙定制
在本文中，单斜晶的（-201）面取向β-带隙调谐（铝X镓1- X）2 ö 3薄膜是通过实现的β-Ga 2 ö 3 / Al的2 ö 3异质结通过与一个可行的退火处理O 2气氛。在退火过程中，Al的Al原子2 ö 3衬底向外扩散容易进入的β-Ga 2 ö 3通过臭氧辅助分子束外延（OMBE）沉积的薄膜。β-（Al x Ga 1- x）2 O中的Al成分通过将退火温度从800调整到1300°C，可以调谐3个样品，并根据X射线光电子能谱（XPS）测量结果和Vegard定律进行实验确定。构造了带隙受控的连续Al成分梯度β-（Al x Ga 1- x）2 O 3薄膜。在这些基础上，的β-Ga 2 ö 3薄膜沉积在β-（铝X镓1- X）2 ö 3（0≤ X ≤0.65）通过OMBE基板，得到的β-Ga 2 ö 3 /β-（铝x嘎1- X）2 ö 3（0≤ X ≤0.65）异质结结构，以及该异质结的能带偏移由XPS相应地确定。这种方法，实现高品质的β-（铝X镓1- X）2 ö 3薄膜具有可调节的Al组分和可调谐带偏移的β-Ga 2 ö 3 /β-（铝X镓1- X）2 O 3界面将为开发和制造β-（Al x Ga 1- x的潜在策略提供指导）基于2 O 3的深紫外光电探测器和功率器件。
更新日期：2021-05-19
中文翻译：
β-Ga2O3/ Al2O3异质结高温退火对单斜β-（AlxGa1-x）2O3（0≤x≤0.65）薄膜的带隙定制
在本文中，单斜晶的（-201）面取向β-带隙调谐（铝X镓1- X）2 ö 3薄膜是通过实现的β-Ga 2 ö 3 / Al的2 ö 3异质结通过与一个可行的退火处理O 2气氛。在退火过程中，Al的Al原子2 ö 3衬底向外扩散容易进入的β-Ga 2 ö 3通过臭氧辅助分子束外延（OMBE）沉积的薄膜。β-（Al x Ga 1- x）2 O中的Al成分通过将退火温度从800调整到1300°C，可以调谐3个样品，并根据X射线光电子能谱（XPS）测量结果和Vegard定律进行实验确定。构造了带隙受控的连续Al成分梯度β-（Al x Ga 1- x）2 O 3薄膜。在这些基础上，的β-Ga 2 ö 3薄膜沉积在β-（铝X镓1- X）2 ö 3（0≤ X ≤0.65）通过OMBE基板，得到的β-Ga 2 ö 3 /β-（铝x嘎1- X）2 ö 3（0≤ X ≤0.65）异质结结构，以及该异质结的能带偏移由XPS相应地确定。这种方法，实现高品质的β-（铝X镓1- X）2 ö 3薄膜具有可调节的Al组分和可调谐带偏移的β-Ga 2 ö 3 /β-（铝X镓1- X）2 O 3界面将为开发和制造β-（Al x Ga 1- x的潜在策略提供指导）基于2 O 3的深紫外光电探测器和功率器件。
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