First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15Wmm−1 output power density,Applied Physics Express

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First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15Wmm−1 output power density
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-03-18 , DOI: 10.35848/1882-0786/abec90
Shiro Ozaki _{1,

2} , Junya Yaita _{1,

2} , Atsushi Yamada _{1,

2} , Yusuke Kumazaki _{1,

2} , Yuichi Minoura _{1,

2} , Toshihiro Ohki _{1,

2} , Naoya Okamoto _{1,

2} , Norikazu Nakamura _{1,

2} , Junji Kotani _{1,

2}

Affiliation

In this letter, we successfully achieved high-power radio frequency (RF) operation of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN substrate at X-band. The developed HEMT on AlN substrate comprised a 200nmthick GaN channel and AlGaN buffer with an Al composition of 30%. Thanks to high breakdown voltage of the HEMT on AlN substrate, we successfully demonstrated 15.2Wmm⁻¹ output power density at operating voltages of 70V even without device technologies such as source-field plate and optimization of device dimension. Our results show that the potential of GaN HEMTs on AlN substrate as next-generation high-power RF devices.

中文翻译：

X 波段 AlGaN/GaN 高电子迁移率晶体管的首次演示使用超过 15Wmm-1 输出功率密度的自支撑 AlN 衬底

在这封信中，我们成功地实现了在 X 波段独立式 AlN 衬底上制造的 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的高功率射频 (RF) 操作。在 AlN 衬底上开发的 HEMT 包括一个 200nm 厚的 GaN 通道和 AlGaN 缓冲液，Al 成分为 30%。由于 AlN 衬底上 HEMT 的高击穿电压，我们在 70V 的工作电压下成功展示了 15.2Wmm ^{-1 的}输出功率密度，即使没有诸如源场板和器件尺寸优化等器件技术。我们的结果表明，AlN 衬底上的 GaN HEMT 作为下一代高功率射频器件的潜力。

更新日期：2021-03-18

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