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Density functional study of structural, electronic and optical properties of quasi-one-dimensional compounds BaTiX3(X=S,Se)
Micro and Nanostructures ( IF 2.7 ) Pub Date : 2021-03-18 , DOI: 10.1016/j.spmi.2021.106859
Thomas Mathew , Suseel Rahul K , Saji Joseph , Vincent Mathew

Structural, electronic and optical properties of the quasi-one-dimensional material BaTiSe3 were investigated using density functional theory and were compared with that of BaTiS3, which is well known for exhibiting the highest broadband giant birefringence. The relative stability of two different structures of BaTiS3, one crystallizing in the space group P63/mmc and another in P63mc were studied using the PBE exchange-correlation functional. It was found that the recently synthesized P63mc structure is more stable than the P63/mmc structure. Electronic structure calculations with HSE06 and DFT + U methods predicted that both BaTiS3 and BaTiSe3 are narrow band gap semiconductors. These calculations also showed that BaTiS3 is a direct band gap semiconductor while BaTiSe3 is an indirect band gap semiconductor. Calculations of optical properties using the DFT + U method for different U values showed that both materials exhibit giant optical anisotropy. Birefringence of both materials were calculated and compared with experimental results of BaTiS3. It was found that BaTiSe3 exhibits broadband giant birefringence at least of the order of that exhibited by BaTiS3.



中文翻译:

准一维化合物的结构,电子和光学性质的密度泛函研究 钛酸钡3X=小号

准一维材料的结构,电子和光学性质 钛酸钡3 使用密度泛函理论进行了研究,并与 钛酸钡3,以展现最高的宽带巨双折射而闻名。两种不同结构的相对稳定性钛酸钡3,一个在空间群中结晶的 P63/多媒体卡 另一个在 P63mc使用PBE交换相关函数进行了研究。发现最近合成的P63mc 结构比 P63/多媒体卡结构体。使用HSE06和DFT + U方法进行电子结构计算可预测两者钛酸钡3钛酸钡3是窄带隙半导体。这些计算还表明钛酸钡3 是直接带隙半导体,而 钛酸钡3是一种间接的带隙半导体。使用DFT + U方法对不同的U值进行光学性能计算,结果表明两种材料均表现出巨大的光学各向异性。计算了两种材料的双折射并与实验结果进行了比较。钛酸钡3。发现钛酸钡3 展现出的宽带巨双折射至少是由 钛酸钡3

更新日期:2021-03-27
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