In this paper, the full-wave electromagnetic (FW-EM) simulation approach for scalable small-signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step-by-step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature-dependent resistance (TDR) R_s and R_d, which are calculated by combining a universal thermal resistance model and the R_s and R_d under the pinch-off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters.

中文翻译：

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考虑温度相关电阻的基于 FW-EM 的 GaN HEMT 小信号可扩展建模方法

在本文中，提出了用于 GaN HEMT 器件可扩展小信号建模的全波电磁 (FW-EM) 仿真方法。从提取的寄生参数中推导出可伸缩规则，这是根据逐步参数提取方法。此外，通过考虑温度相关电阻 (TDR) R _s和R _d提高了精度，这些电阻是通过结合通用热阻模型和R _s和R _d计算得出的在夹断条件下。最后，使用一组栅极长度为 0.25 μm 的 GaN HEMT 进行验证，实验结果表明，实测和模拟散射 (S) 参数之间取得了良好的一致性。