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FW-EM-based approach for scalable small-signal modeling of GaN HEMT with consideration of temperature-dependent resistances
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields ( IF 1.6 ) Pub Date : 2021-03-17 , DOI: 10.1002/jnm.2882
Xianli Tang 1 , Taojun Yang 2 , Yonghao Jia 1 , Yuehang Xu 3
Affiliation  

In this paper, the full-wave electromagnetic (FW-EM) simulation approach for scalable small-signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step-by-step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature-dependent resistance (TDR) Rs and Rd, which are calculated by combining a universal thermal resistance model and the Rs and Rd under the pinch-off condition. In the end, a set of GaN HEMT with a gate length of 0.25 μm is used for validation, and the experimental results show that good agreements have been achieved between the measured and the simulated scattering (S) parameters.

中文翻译:

考虑温度相关电阻的基于 FW-EM 的 GaN HEMT 小信号可扩展建模方法

在本文中,提出了用于 GaN HEMT 器件可扩展小信号建模的全波电磁 (FW-EM) 仿真方法。从提取的寄生参数中推导出可伸缩规则,这是根据逐步参数提取方法。此外,通过考虑温度相关电阻 (TDR) R sR d提高了精度,这些电阻是通过结合通用热阻模型和R sR d计算得出的在夹断条件下。最后,使用一组栅极长度为 0.25 μm 的 GaN HEMT 进行验证,实验结果表明,实测和模拟散射 (S) 参数之间取得了良好的一致性。
更新日期:2021-03-17
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