Recently, the square planar ${\mathrm{MoS}}_2$ monolayer, which exhibits the Cairo pentagonal tiling (termed as $1\mathrm{P}\text{−}{\mathrm{MoS}}_2$), was identified as an intrinsic quantum anomalous Hall (QAH) insulator. However, there is a paucity of theoretical work concerning a suitable substrate to support its nontrivial electron transport properties, which is the prerequisite for practical applications. Here. we demonstrate that CuI(001) serves an excellent substrate candidate for epitaxial growth of the $1\mathrm{P}\text{−}{\mathrm{MoS}}_2$ sheet by showing that the intrinsic ferromagnetism and the QAH state of $1\mathrm{P}\text{−}{\mathrm{MoS}}_2$ remain unaltered in the $1\mathrm{P}\text{−}{\mathrm{MoS}}_2$/CuI(001) system. Further analyses of the strain effect on $1\mathrm{P}\text{−}{\mathrm{MoS}}_2$ reveal that the QAH is robust within a strain range from $-$ 2% to 2%. Our findings will inspire the experimental realization of QAH effects in two-dimensional (2D) pentagon-based materials.

中文翻译：

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在CuI（001）衬底上生长的五角形MoS2单层中的鲁棒量子异常霍尔效应

最近，方形平面 ${\mathrm{硫化钼}}_{\mathrm{2个}}$ 单层，表现出开罗五角形平铺（称为 $\mathrm{1个}\mathrm{P}\text{-}{\mathrm{硫化钼}}_{\mathrm{2个}}$）被认为是本征量子异常霍尔（QAH）绝缘子。但是，关于合适的衬底以支持其非平凡的电子传输性能的理论工作很少，这是实际应用的前提。这里。我们证明了CuI（001）是外延生长的优异衬底候选物。$\mathrm{1个}\mathrm{P}\text{-}{\mathrm{硫化钼}}_{\mathrm{2个}}$ 通过显示本征铁磁性和QAH状态 $\mathrm{1个}\mathrm{P}\text{-}{\mathrm{硫化钼}}_{\mathrm{2个}}$ 保持不变 $\mathrm{1个}\mathrm{P}\text{-}{\mathrm{硫化钼}}_{\mathrm{2个}}$/ CuI（001）系统。进一步分析应变对$\mathrm{1个}\mathrm{P}\text{-}{\mathrm{硫化钼}}_{\mathrm{2个}}$ 揭示了QAH在从 $-$2％至2％。我们的发现将启发在基于二维（2D）五边形的材料中QAH效应的实验实现。