Polarization-resolved photoluminescence was used to study spin relaxation of photoexcited holes in In_0.53Ga_0.47As/InP quantum wells in a quantizing magnetic field as a function of temperature. At a temperature below 10 K, the circular polarization of the photoluminescence due to the spin-split valence band Landau levels was found temperature-independent. In this temperature range fast hole spin relaxation as compared to their lifetime leads to the photoluminescence circular polarization determined by the ratio of these times. Increasing temperature resulted in efficient hole spin thermalization in the Zeeman split valence band Landau levels and as a consequence, in vanishing photoluminescence polarization. Fits of the experimental data by the theory allowed a determination of the hole spin relaxation times related to different Landau levels and the corresponding hole effective g-factor. Direct measurements of the hole spin relaxation times prove the obtained results.

使用偏振分辨光致发光来研究In _0.53 Ga _0.47中光激发空穴的自旋弛豫量子磁场中As / InP量子阱随温度的变化而变化。在低于10 K的温度下，发现由于自旋分裂价带Landau能级而引起的光致发光的圆偏振与温度无关。在此温度范围内，与它们的寿命相比，快速的空穴自旋弛豫导致由这些时间之比确定的光致发光圆偏振。温度升高导致塞曼分裂价带Landau能级发生有效的空穴自旋热化，因此，光致发光偏振消失。该理论对实验数据的拟合允许确定与不同Landau水平有关的空穴自旋弛豫时间以及相应的空穴有效g因子。