Antimony sulfide (Sb₂S₃) and antimony selenide (Sb₂Se₃), with optical bandgaps (E_g) of 1.88 and 1.1 eV, respectively, both crystallize in the orthorhombic structure and can produce Sb₂S_xSe_3–x of intermediate E_g for solar cells. Herein, powder sources of Sb₂S₃ and Sb₂Se₃ in different mass ratios in vacuum thermal evaporation are used to produce Sb₂S_xSe_3–x thin films of thickness 455 nm. These films show a systematic variation in their characteristics with x—A, Sb₂S_2.05Se_0.95 (E_g, 1.51 eV); B, Sb₂S_1.71Se_1.29 (1.44 eV); C, Sb₂S_1.24Se_1.76 (1.40 eV); D, Sb₂S_0.64Se_2.36 (1.32 eV); and E, Sb₂S_0.44Se_2.56 (1.29 eV)—in the light-generated current density, and in their photoconductivity. Solar cells of SnO₂:F/CdS(100 nm)/Sb₂S_xSe_3–x(455 nm)/C-Ag with Sb₂S_xSe_3–x films of compositions A–E show open circuit voltages (V_oc) of 0.566–0.418 V; short circuit current densities of 9.65–31.5 mA cm⁻²; fill factors of 0.38–0.52; and conversion efficiencies (η) of 2.1–6.8%. Seven series-connected solar cells of E 7 cm² in area produce 34.2 mW with V_oc of 2.83 V and η 4.88%. In view of their operational stability and the material perspectives of Sb₂S_xSe_3–x, considerations considerations to improve these solar cells are discussed.

中文翻译：

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硫化锑硒化物薄膜中材料特性与化学成分的系统变化及其与太阳能电池性能的相关性

硫化锑 (Sb ₂ S ₃ ) 和硒化锑 (Sb ₂ Se ₃ ) 的光学带隙 ( E _g ) 分别为 1.88 和 1.1 eV，均以斜方晶结构结晶，可生成 Sb ₂ S _x Se _{3– x}太阳能电池的中间体E _g。本文采用真空热蒸发不同质量比的Sb ₂ S ₃和Sb ₂ Se ₃粉末源制备Sb ₂ S _x Se _{3– x}厚度为 455 nm 的薄膜。这些薄膜的特性随x -A、Sb ₂ S _2.05 Se _0.95 ( E _g , 1.51 eV)显示出系统性变化；B，Sb ₂ S _1.71 Se _1.29 (1.44 eV)；C，Sb ₂ S _1.24 Se _1.76 (1.40 eV)；D，Sb ₂ S _0.64 Se _2.36 (1.32 eV)；E、Sb ₂ S _0.44 Se _2.56 (1.29 eV)——光生电流密度和光电导率。SnO ₂太阳能电池：F/CdS(100 nm)/Sb₂ S _x Se _{3– x} (455 nm)/C-Ag 和 Sb ₂ S _x Se _{3– x}薄膜组成 A – E 显示开路电压 ( V _oc ) 为 0.566–0.418 V；短路电流密度为 9.65–31.5 mA cm ^-2；0.38-0.52 的填充因子；转换效率 ( η ) 为 2.1–6.8%。七个面积为 E 7 cm ²的串联太阳能电池产生 34.2 mW 的功率，V _oc为 2.83 V，η 为4.88%。鉴于其操作稳定性和 Sb ₂ S _x的材料前景Se _{3– x}，讨论了改进这些太阳能电池的考虑因素。