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Silver Antimony Sulfide Selenide Thin-Film Solar Cells via Chemical Deposition
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-03-17 , DOI: 10.1002/pssa.202100058
Jesús Capistrán-Martínez 1 , M.T.S. Nair 1 , P.K. Nair 1
Affiliation  

Silver antimony sulfide selenide (AgSbS1.3Se0.7) thin film forms from silver antimony sulfide (AgSbS2, 700 nm) and amorphous selenium (Se, 300 nm), both obtained via chemical deposition and heated in contact at 180 °C for 30 min in an argon ambient. The face-centered cubic (fcc) structure of AgSbS2 (cuboargyrite) is maintained in AgSbS1.3Se0.7. The optical bandgap of 1.8 eV (direct forbidden) in AgSbS2 reduces to 1.47 eV in AgSbS1.3Se0.7 with an increase in the light-generated current density from 19 to 29 mA cm−2. The photoconductivity in AgSbS1.3Se0.7 of 2 × 10−5 Ω−1 cm−1 is an order of magnitude higher than that in AgSbS2. A solar cell of SnO2:F/CdS(80 nm)/AgSbS1.3Se0.7(700 nm)/C-Ag, produced by heating at 280 °C with the graphite (C) electrode applied, shows a conversion efficiency (η) of 0.65%, open-circuit voltage (Voc) of 0.537 V, short-circuit current density (Jsc) of 2.07 mA cm−2, and fill factor of 0.60. In AgSbS2 solar cell, η is of 0.54% with a Voc of 0.625 V. The merits of AgSbS1.3Se0.7 as a solar cell absorber and ways to increase the Jsc in the AgSbS1.3Se0.7 solar cell to match its JL are discussed.

中文翻译:

通过化学沉积制备硫化锑硒化银薄膜太阳能电池

硫化锑银 (AgSbS 1.3 Se 0.7 ) 薄膜由硫化银锑 (AgSbS 2 , 700 nm) 和无定形硒 (Se, 300 nm) 形成,两者均通过化学沉积获得,并在 180 °C 下接触加热 30 分钟在氩气环境中。AgSbS 2(方银锭)的面心立方(fcc)结构保持在AgSbS 1.3 Se 0.7 中。随着光生电流密度从19 mA cm -2增加到29 mA cm -2,AgSbS 2中1.8 eV(直接禁止)的光学带隙减小到AgSbS 1.3 Se 0.7 中的1.47 eV 。AgSbS 1.3 Se 中的光电导率0.7 of 2 × 10 -5  Ω -1  cm -1比AgSbS 2高一个数量级。SnO 2 :F/CdS(80 nm)/AgSbS 1.3 Se 0.7 (700 nm)/C-Ag太阳能电池,通过在 280 °C 下加热并应用石墨 (C) 电极生产,显示出转换效率 ( η ) 为 0.65%,开路电压 ( V oc ) 为 0.537 V,短路电流密度 ( J sc ) 为 2.07 mA cm -2,填充因子为 0.60。在 AgSbS 2太阳能电池中,η为 0.54%,V oc0.625 V。讨论了AgSbS 1.3 Se 0.7作为太阳能电池吸收剂的优点以及增加AgSbS 1.3 Se 0.7太阳能电池中J sc以匹配其J L 的方法。
更新日期:2021-03-17
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