In order to improve in-field J _c values of GdBCO CCs fabricated by the reactive co-evaporation by deposition and reaction (RCE-DR) process with the nominal composition of Gd:Ba:Cu = 1:1:2.5, the Gd ₂ O ₃ particles trapped in the GdBCO superconducting matrix were refined by controlling the nucleation and growth temperature of Gd ₂ O ₃ in the liquid phase before the growth of GdBCO film at the same growth conditions of 860 °C in 150 mTorr oxygen pressure. With decreasing the growth temperature of Gd ₂ O ₃ from 860 to 820 °C in the oxygen pressure of 30 mTorr, the average particle size of Gd ₂ O ₃ was monotonously decreased from 125 ± 41 to 73 ± 31 nm. With refining the average particle size of Gd ₂ O _3, while J _c in a self-field was monotonously decreased, minimum in-field J _c values were first increased and then decreased again. With lowering the growth temperature of Gd ₂ O ₃ , the gradual decrease of self-field J _c may be mainly attributed to the gradual degradation of both in-plane and out-of-plane textures, the variation of the minimum in-field J _c values might originate mainly from the variation of the stacking fault density, which, however, requires further analysis.

中文翻译：

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通过细化 RCE-DR 工艺制造的 GdBa2Cu3O7-未涂层导体中捕获的 Gd2O3 颗粒来改善钉扎性能


为了提高标称成分为 Gd:Ba:Cu = 1:1:2.5 的通过沉积反应共蒸发 (RCE-DR) 工艺制造的 GdBCO CC 的现场 J _c值，Gd ₂在GdBCO薄膜生长之前，通过控制液相中Gd ₂ O ₃的成核和生长温度来细化捕获在GdBCO超导基体中的O ₃颗粒，生长条件为860℃、150 mTorr氧压。在30 mTorr的氧气压力下，随着Gd ₂ O ₃的生长温度从860℃降低到820℃，Gd ₂ O ₃的平均粒径从125±41nm单调减小到73±31nm。随着Gd ₂ O _{3 平均粒径的细化，}自场J _c单调减小，而最小场内J _c值先增大后减小。随着Gd ₂ O ₃生长温度的降低，自场J _c逐渐减小，可能主要归因于面内和面外织构的逐渐退化，最小内场J c 的变化。 _c值可能主要源于堆垛层错密度的变化，但这需要进一步分析。