BaMO ₃ (M = Zr, Hf) pinning centers introduced in REBa ₂ Cu ₃ O _7-x (REBCO and RE = rare earth) coated conductors yield superior performance in high magnetic fields. We present the critical current density J_c over a temperature range of 4.2–77 K and magnetic fields of 0–14 T ( B || c- axis), of 5-15 mol.% Zr- and Hf- added REBCO 4+ μm thick film tapes fabricated by advanced metal organic chemical vapor deposition (A-MOCVD). The morphology of self-assembled BMO nanorods aligned along c-axis is found to be dependent on the Zr/Hf content. We also observe a correlation between the density of RE ₂ O ₃ in-plane nanoprecipitates and the continuity and concentration of BMO nanorods in films of different Ba content. It is found that the (Ba + M)/Cu (M = Zr, Hf) content in REBa ₂ Cu ₃ O _7-x affects the shape of pinning force density curves over a wide magnetic field range and temperatures below 20 K. Another remarkable observation is the similarity in the critical current properties of Hf and Zr- added REBCO films as function of (Ba + M)/Cu content at intermediate to high range of (Ba + M)/Cu content. A quantitative analysis of pinning efficiency and correlation with the microstructure of Zr and Hf- added REBCO coated conductors is discussed.

中文翻译：

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在从低到高的磁场中，采用先进的MOCVD技术制备的Zr和Hf附加REBCO涂层导体的钉扎特性

在REBa ₂ Cu ₃ O _7-x（REBCO和RE =稀土）涂层导体中引入的BaMO ₃（M = Zr，Hf）钉扎中心可 在强磁场中产生出众的性能。我们提出临界电流密度Ĵ _ç 在4.2–77 K的温度范围和0–14 T的磁场（ 乙 || C- 轴），通过先进的金属有机化学气相沉积（A-MOCVD）制成5-15 mol％Zr-和Hf-添加的REBCO 4+μm厚膜带。发现沿着c轴排列的自组装BMO纳米棒的形态取决于Zr / Hf含量。我们还观察到RE ₂ O ₃面内纳米沉淀的密度与不同Ba含量的薄膜中BMO纳米棒的连续性和浓度之间的相关性 。发现REBa ₂ Cu ₃ O _7-x中的（Ba + M）/ Cu（M = Zr，Hf）含量 在20 K以下的宽磁场范围和温度下，会影响钉扎力密度曲线的形状。另一个显着的观察结果是，添加Hf和Zr的REBCO薄膜的临界电流特性与（Ba + M）/ Cu含量的关系相似在（Ba + M）/ Cu含量的中高范围内。讨论了钉扎效率及其与添加Zr和Hf的REBCO涂层导体的微观结构之间关系的定量分析。