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Penta-Band Inverted-F Antenna Tuned by High-Voltage Switchable RF Capacitors
IEEE Open Journal of Antennas and Propagation ( IF 3.5 ) Pub Date : 2021-03-03 , DOI: 10.1109/ojap.2021.3063528
Valentyn Solomko , Oguzhan Oezdamar , Robert Weigel , Amelie Hagelauer

A penta-band inverted-F antenna (IFA) tuned by two high-voltage aperture tuning networks is presented in the paper. The design is based on a singe, non-bended radiating arm IFA. Each of the two aperture tuners comprises a high-voltage switchable RF capacitor IC in parallel with an off-chip inductor. The antenna can be tuned to any of the 5 bands of sub-4 GHz cellular spectrum between 690 MHz and 3800 MHz with return loss exceeding 6 dB at the feed over more that 95% of the total frequency range. A systematic design and analysis of the penta-band IFA based on transmission line model is provided, tuning approach for carrier aggregation enablement over two bands at a time is discussed. A nonlinear performance of the designed antenna with RF capacitors fabricated in bulk-CMOS RF-switch technology is demonstrated.

中文翻译:

由高压可切换射频电容器调谐的五频倒F天线

本文介绍了一种通过两个高压孔径调谐网络调谐的五频带倒F天线(IFA)。该设计基于单根无弯曲辐射臂IFA。两个孔径调谐器中的每一个都包括与片外电感器并联的高压可切换RF电容器IC。可以将天线调谐到690 MHz和3800 MHz之间的4 GHz以下5 GHz蜂窝频谱的5个频段中的任何一个,在馈电范围内的回波损耗超过6 dB,超过总频率范围的95%。提供了基于传输线模型的五频带IFA的系统设计和分析,讨论了一次在两个频带上实现载波聚合的调谐方法。演示了采用体CMOS RF开关技术制造的带有RF电容器的设计天线的非线性性能。
更新日期:2021-03-16
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