A semiphysical semibehavioral analytical model for switching transient of silicon carbide (SiC) MOSFET power module is proposed in this article. The model is developed for the applications in design automation where the tradeoff between accuracy and efficiency is important. The estimation of switching losses and voltage/current overshoots is mainly concerned in the proposed model. The switching transient is divided into subperiods according to the equivalent circuit of SiC MOSFET and the approximate physical mechanism during the process. The influence of the opposite device in the half-bridge is included in the analysis and corresponding derivations are made. Behavioral modeling of the waveforms is used in the subperiods where the mechanisms of the transient process are very complicated. The tradeoff between accuracy and efficiency is well implemented with this modeling approach. The time consumption of the proposed model is less than 50% of those of the previous analytical models and the accuracy is also acceptable. The errors on overshoots are less than 10% on average and the errors on switching losses are around 10%–20%. Experiment results are given and the effectiveness of the proposed model is proven.

中文翻译：

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SiC MOSFET模块开关瞬态过程的半物理半行为分析模型

本文提出了一种用于碳化硅（SiC）MOSFET功率模块开关瞬态的半物理半行为分析模型。该模型是为设计自动化中的应用开发的，其中精度和效率之间的权衡很重要。所提出的模型主要涉及开关损耗和电压/电流过冲的估计。根据SiC MOSFET的等效电路和过程中的近似物理机制，将开关瞬变分为子时段。分析中包括了相对器件在半桥中的影响，并进行了相应的推导。在瞬态过程的机制非常复杂的子时段中，使用了波形的行为建模。使用这种建模方法可以很好地实现准确性和效率之间的权衡。所提出模型的时间消耗少于以前分析模型的时间消耗的50％，并且准确性也是可以接受的。过冲误差平均小于10％，开关损耗误差约为10％–20％。实验结果表明了该模型的有效性。