We report the effect of Mn incorporation on the structural and optical properties of GaN grown on a sapphire substrate in a plasma-enhanced molecular-beam epitaxy system followed by Mn ion implantation and annealing. The crystalline quality and phase purity were determined by high-resolution X-ray diffraction (XRD). The XRD results indicated that no macroscopic second phases were present in the Mn-implanted GaN layer after the annealing process. High-resolution transmission microscopy and energy dispersive X-ray spectroscopy revealed that the as-grown GaN epilayer and Mn-implanted GaN layer after annealing were single crystals with a hexagonal wurtzite structure, and they grew with a c-axis orientation perpendicular to the sapphire substrate. The Raman and photoluminescence spectra showed that the Mn-implanted GaN layer fabricated with a Mn ion dose of 5 × 10¹⁵ cm⁻² followed by annealing at 800 °C for 30 min had higher crystalline quality than the Mn-implanted GaN layers fabricated with Mn ion doses of 5 × 10¹⁵ and 2 × 10¹⁶ cm⁻² followed by annealed at 900 °C for 30 and 80 min.

我们报告了 Mn 掺入对等离子体增强分子束外延系统中蓝宝石衬底上生长的 GaN 的结构和光学性质的影响，然后进行 Mn 离子注入和退火。晶体质量和相纯度通过高分辨率 X 射线衍射 (XRD) 测定。 XRD结果表明，退火过程后，Mn注入的GaN层中不存在宏观第二相。高分辨率透射显微镜和能量色散X射线光谱显示，退火后生长的GaN外延层和Mn注入GaN层是具有六方纤锌矿结构的单晶，并且它们以垂直于蓝宝石的c轴取向生长基质。拉曼光谱和光致发光光谱表明，用Mn离子剂量为5×10 ¹⁵  cm ^-2并在800℃退火30分钟制备的Mn注入GaN层比用Mn离子掺杂制备的Mn注入GaN层具有更高的晶体质量。 Mn离子剂量为5×10 ¹⁵和2×10 ¹⁶  cm ^-2，然后在900℃下退火30和80分钟。