ABSTRACT

As mainstream optical imaging electronic devices, image sensors are widely used in space missions under complex radiation environments. This study investigated the effects 60 and 10 MeV proton irradiations on dark current, dark signal non-uniformity (DSNU), and photon response non-uniformity (PRNU) for a commercial global shutter 8T complementary metal–oxide semiconductor (CMOS) image sensor. A fluence range from 9 × 10⁹ p/cm² to 7.26 × 10¹⁰ p/cm² was considered. The total ionizing dose deposited reached 10 krad (Si), which significantly increased the dark current. DSNU and PRNU also followed a similar trend with an increase in the dose, which is based on the effects of the total dose and displacement damage. After irradiation, a TCAD simulation was conducted to identify the radiation-induced defects. The results showed that the trapped positive charges in the oxides, interface states in the Si/SiO₂ interface, and bulk defects in a pinned photodiode depleted region significantly increased the dark current. The outcomes of this study form significant reference for advancements in radiation-hardened image sensor designs.

摘要

图像传感器作为主流的光学成像电子设备，广泛应用于复杂辐射环境下的空间任务。本研究调查了 60 和 10 MeV 质子辐照对商用全局快门 8T 互补金属氧化物半导体 (CMOS) 图像传感器的暗电流、暗信号非均匀性 (DSNU) 和光子响应非均匀性 (PRNU) 的影响。通量范围从 9 × 10 ⁹  p/cm ²到 7.26 × 10 ¹⁰  p/cm ²被考虑。沉积的总电离剂量达到 10 krad (Si)，这显着增加了暗电流。DSNU 和 PRNU 也遵循类似的趋势，剂量增加，这是基于总剂量和位移损伤的影响。辐照后，进行 TCAD 模拟以识别辐射引起的缺陷。结果表明，氧化物中捕获的正电荷、Si/SiO ₂界面中的界面态以及钉扎光电二极管耗尽区中的体缺陷显着增加了暗电流。这项研究的结果为抗辐射图像传感器设计的进步提供了重要参考。