ABSTRACT

Process validation test (PVT) helps to predict the response of a device to various figure of merit (FOM) parameters, such as diameter (process), supply voltage, and temperature. In this paper, the Stanford model is modified to investigate the effect of temperature, nanotube diameter, etc. on the current-voltage characteristics, drain current, transconductance, threshold voltage, subthreshold swing, and conductance of Carbon Nanotube Field Effect Transistors (CNTFETs). To study different parameters in terms of temperature in CNTFETs, we simulate different circuits by adding temperature-dependent voltage/current equations and defining temperature as a parameter in the Stanford model. The results show that an increase in temperature results in higher subthreshold swing, lower on/off current ratio, and lower threshold voltage. Moreover, by adding the variable diameter to the model, we examine its effect on different CNTFET parameters. As diameter increases, both the on/off current ratio and subthreshold swing increase, so the net effect is almost the same. CNTFET noise model is translated in Verilog-A, and then implemented in the ADS simulator. The results show that the shot noise is more noticeable at high frequencies and the flicker noise at low frequencies. Moreover, the noise figure of CNTFET is higher at lower frequencies.

摘要

通过将变量直径添加到模型中，我们检查了它对不同 CNTFET 参数的影响。随着直径的增加，开/关电流比和亚阈值摆幅都增加，因此净效应几乎相同。CNTFET 噪声模型在 Verilog-A 中翻译，然后在 ADS 模拟器中实现。结果表明，散粒噪声在高频处更为明显，而闪烁噪声在低频处更为明显。此外，CNTFET 的噪声系数在较低频率时更高。结果表明，散粒噪声在高频处更为明显，而闪烁噪声在低频处更为明显。此外，CNTFET 的噪声系数在较低频率时更高。