Abstract

Irradiation of porous silicon with Ar\({}^{+}\) ions at energies from 100 to 400 keV and fluence of \(10^{12}\) cm\({}^{-2}\) was carried out. The effect of ion irradiation at different energies of incident particles on the photoluminescence spectrum of porous silicon has been studied. it has been shown that the photoluminescence spectrum consists of two components. One of then is associated with the presence of structural defects; another, with the surface states on the complex surface of porous silicon. A method for estimating the thickness of the luminescent layer based on the analysis of the photoluminescence peak associated with defects is proposed.

中文翻译：

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Ar $$ {} ^ {\ mathbf {+}} $$的能量注入对多孔硅光致发光的影响

摘要

用Ar多孔硅的照射\（{} ^ {+} \）离子在100至400千电子伏特和注量的能量\（10 ^ {12} \）厘米\（{} ^ { - 2} \）进行出去。研究了不同入射能量的离子辐照对多孔硅光致发光光谱的影响。已经表明，光致发光光谱由两个成分组成。其中之一与结构缺陷的存在有关。另一种是表面状态在多孔硅的复杂表面上。提出了一种基于与缺陷相关的光致发光峰的分析来估计发光层厚度的方法。