In the present work, Cu-doped indium sulfide thin films (In₂S₃:Cu) have been produced by chemical bath deposition (CBD) method on the glass substrates. The deposited films have been post-annealed at 300 °C temperature for about one hour. The morphological properties of produced thin films have been investigated analytically before and after the Cu doping process. To this end, the atomic force microscopy analysis has been used to study the height fluctuations of these rough thin films. By the monofractal analysis, the height distribution, and the higher-order moments (skewness and kurtosis) of the surface height have been studied. The deviation from the Gaussian distribution has been shown by the results. Also, the correlation function and therefore the correlation length of the produced surfaces have been investigated. The numerical calculations revealed that the morphology and the statistical properties of thin films depend on the growth method. The power spectral density has been evaluated, and the achieved results of higher-order moments of the surface height have been confirmed. The skewness values of thin films heights are nonzero; moreover, the obtained kurtosis values illustrate the mild peak respect to Gaussian distribution. The Hurst exponent and thus the fractal dimensions of surfaces have been estimated.

在目前的工作中，掺杂铜的铟锡薄膜（In ₂ S ₃：Cu）已通过化学浴沉积（CBD）方法在玻璃基板上生产。沉积的薄膜已在300°C的温度下进行了约1小时的后退火处理。在铜掺杂过程之前和之后，已经分析地研究了产生的薄膜的形态学特性。为此，原子力显微镜分析已用于研究这些粗糙薄膜的高度波动。通过单分形分析，研究了表面高度的高度分布和高阶矩（偏度和峰度）。结果表明了与高斯分布的偏差。而且，已经研究了相关函数以及因此产生的表面的相关长度。数值计算表明，薄膜的形貌和统计特性取决于生长方法。已经评估了功率谱密度，并且已经确认了表面高度的高阶矩的实现结果。薄膜高度的偏度值不为零；此外，所获得的峰度值说明了相对于高斯分布的温和峰值。已经估计了赫斯特指数，从而估计了表面的分形维数。