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Analysis of the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using a single-phase-lag (SPL) model
Journal of Computational Electronics ( IF 2.2 ) Pub Date : 2021-03-15 , DOI: 10.1007/s10825-021-01681-z
Fraj Echouchene , Elassaad Jemii

The main objective of this work is to study the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using the single-phase-lag heat conduction model to describe the effects of the metallic conductive filament (CF) radius and the reset voltage on the thermal and electric field. The results reveal that the CF geometry plays an important role in the transient Joule heating. The heat wave of fast transient conduction is stronger in the narrow region of the CF during the reset process for a high applied voltage and a small top radius of the CF. It is demonstrated that the presented model can predict the nanoscale heat transfer in the transient state and during the reset process in the CBRAM. Finally, numerical computations are carried out using the finite-element method to solve the nonlinear heat conduction equations.



中文翻译:

使用单相滞后(SPL)模型分析导电桥随机存取存储器(CBRAM)中的瞬态焦耳热效应

这项工作的主要目的是使用单相滞后导热模型研究导电桥随机存取存储器(CBRAM)中的瞬态焦耳热效应,以描述金属导电丝(CF)半径和在热和电场上的复位电压。结果表明,CF几何形状在瞬态焦耳热中起着重要作用。对于CF的高施加电压和较小的上半径,在复位过程中,CF的狭窄区域中快速瞬态传导的热波更强。结果表明,所提出的模型可以预测瞬态和CBRAM重置过程中的纳米级传热。最后,使用有限元方法进行了数值计算,以求解非线性热传导方程。

更新日期:2021-03-15
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