InGaAs/InP single-photon avalanche diode (SPAD) with small active diameter and backside microlens was fabricated and its dark count and after-pulse noises were characterized. In addition, by optimizing multiplication layer and reducing the active diameter, high photon detection efficiency (PDE) was achieved as well as suppressed dark count probability (DCP) and after-pulse probability (APP) near room temperature. The gated Geiger-mode characteristics of SPAD were investigated with the gate amplitude of 6.6 V and repetition frequency of 10 MHz. Superior single-photon detection characteristics as PDE of 20.9%, DCP of 1.02 × 10^–5 and APP of 0.8% were observed at the operation temperature of + 20 °C. It is a promising result that allows compact and low-cost detector module for quantum key distribution system with simple cooling apparatus.

制备了具有小有源直径和背面微透镜的InGaAs / InP单光子雪崩二极管（SPAD），并表征了其暗计数和脉冲后噪声。此外，通过优化乘法层并减小有效直径，可以实现较高的光子检测效率（PDE）以及在室温附近抑制的暗计数概率（DCP）和脉冲后概率（APP）。在6.6 V的门幅和10 MHz的重复频率下研究了SPAD的门Geiger模特性。出色的单光子检测特性，PDE为20.9％，DCP为1.02×10 ^–5在+ 20°C的工作温度下观察到APP为0.8％。这是有希望的结果，其允许用于具有简单冷却装置的量子密钥分配系统的紧凑且低成本的检测器模块。