Metal foils, particularly copper and copper-nickel alloy, are commonly used to grow large-area crystalline mono- or bi-layer graphene domains and films by chemical vapor deposition (CVD) methods. Thin-metal films, which are usually made by depositing metals on various substrates such as single-crystal sapphire, have also been reported as catalytic substrates for high-quality graphene growth. Thin-metal films can also serve as intermediates to grow graphene on catalytically inactive substrates, such as dielectrics for electronic devices. Focusing on the CVD growth of graphene on thin-metal films, we review the history of CVD graphene growth, the growth on different single-metals and alloy thin films, and the reported performance of such graphene in electronic devices. We also comment on current challenges and opportunities for the further development of this field.

金属箔，特别是铜和铜镍合金，通常用于通过化学气相沉积（CVD）方法生长大面积晶体单层或双层石墨烯畴和薄膜。据报道，通常通过在各种衬底（例如单晶蓝宝石）上沉积金属制成的金属薄膜也可以作为高质量石墨烯生长的催化衬底。薄金属膜还可以用作在非催化活性基材（例如电子设备的电介质）上生长石墨烯的中间体。着眼于石墨烯在金属薄膜上的CVD生长，我们回顾了CVD石墨烯的生长历史，在不同的单金属和合金薄膜上的生长以及此类石墨烯在电子设备中的报道性能。