The physical unclonable function (PUF) is a promising low-cost hardware security primitive. Recent advances in nanotechnology have provided new opportunities for nanoscale PUF circuits. The resistive random access memory (RRAM) is extensively used in nanoscale circuits due to its low cost, non-volatility and easy integration with CMOS. This paper proposes a novel tristate hybrid PUF (TH-PUF) design based on a one-transistor-one-RRAM (1T1R) cell; this cell can be configured into two weak PUFs and a strong PUF using few control signals. To assess the proposed PUF design, a compact RRAM model at UMC 65 nm technology is employed. Simulation results show that the proposed TH-PUF achieves good uniqueness, reliability as well as a higher gate usability compared with an entire CMOS PUFs. The number of challenge response pairs (CRPs) of the proposed TH-PUF is larger than other RRAM-based PUFs. Moreover, the TH-PUF is more resistant to a modeling machine learning attack than traditional PUF designs.

中文翻译：

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使用具有非易失性内存的可配置三态混合方案的物理不可克隆功能

物理不可克隆功能（PUF）是一种有前途的低成本硬件安全原语。纳米技术的最新进展为纳米级PUF电路提供了新的机会。电阻随机存取存储器（RRAM）由于其低成本，非易失性以及易于与CMOS集成而广泛用于纳米级电路中。本文提出了一种基于单晶体管一RRAM（1T1R）单元的新型三态混合PUF（TH-PUF）设计。可以使用很少的控制信号将该单元配置为两个弱PUF和一个强PUF。为了评估建议的PUF设计，采用了UMC 65 nm技术的紧凑型RRAM模型。仿真结果表明，与整个CMOS PUF相比，拟议的TH-PUF具有良好的唯一性，可靠性以及更高的栅极可用性。提出的TH-PUF的质询响应对（CRP）的数量大于其他基于RRAM的PUF。而且，TH-PUF比传统的PUF设计更能抵抗建模机器学习攻击。