This letter presents single-ended and differential $D$ -band power amplifiers (PAs) in 55nm SiGe BiCMOS technology. The proposed PAs exploit the remarkable features of common-base stages for rising the power efficiency, i.e., 1) higher breakdown voltage; 2) sharp compression profile due to the enhanced linearity; and 3) supply current adapted to the signal amplitude by means of current clamping. A four-stage single-ended PA proves ${P}\,\,_{\mathrm {1\,dB}}\,\,=16.8$ dBm with ${P}\,\,_{\text {SAT}}\,\,=17.6$ dBm at 135 GHz. The PAEs at ${P}~_{\mathrm {1\,dB}}$ and ${P}\,\,_{\mathrm {1\,dB-6\,dB}}$ are 17.1% and 8.5%, respectively. With a differential PA, the linear output power is increased to ${P}\,\,_{\mathrm {1\,dB}}\,\,=18.5$ dBm with ${P}\,\,_{\text {SAT}}\,\,=19.3$ dBm at 135 GHz. The PAEs at ${P}~_{\mathrm {1\,dB}}$ and ${P}\,\,_{\mathrm {1\,dB-6\,dB}}$ are 12.6% and 6.7%, respectively. The PAs demonstrate $3\times $ PAE improvement in the linear region against the state of the art.

中文翻译：

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在多个共基级中通过电流钳位增强了具有16.8dBmP₁dB和17.1％PAE的D波段SiGe BiCMOS功率放大器

这封信介绍了单端和差分 $ D $ 55nm SiGe BiCMOS技术的宽带功率放大器（PA）。提出的功率放大器利用了共基级的显着特征来提高功率效率，即：1）更高的击穿电压；2）由于增强的线性度而产生了急剧的压缩轮廓；3）通过电流钳制提供适应信号幅度的电流。四级单端功率放大器证明 $ {P} \，\，_ {\ mathrm {1 \，dB}} \，\，= 16.8 $ dBm与 $ {P} \，\，_ {\ text {SAT}} \，\，= 17.6 $ 135 GHz时为dBm。的PAE $ {P}〜_ {\ mathrm {1 \，dB}} $ 和 $ {P} \，\，_ {\ mathrm {1 \，dB-6 \，dB}} $ 分别是17.1％和8.5％。使用差分PA时，线性输出功率增加到 $ {P} \，\，_ {\ mathrm {1 \，dB}} \，\，= 18.5 $ dBm与 $ {P} \，\，_ {\ text {SAT}} \，\，= 19.3 $ 135 GHz时为dBm。的PAE $ {P}〜_ {\ mathrm {1 \，dB}} $ 和 $ {P} \，\，_ {\ mathrm {1 \，dB-6 \，dB}} $ 分别是12.6％和6.7％。功率放大器演示 $ 3 \次$ 相对于现有技术，线性区域中的PAE有所改善。