A Si-based series-shunt transmit/receive (TX/RX) switch with a high-power 1-dB compression point ( $P_{\text {1 dB}}$ ) of 29.2 dBm is demonstrated at 28 GHz for 5G communication. The proposed switch also exhibits low insertion losses of 2.86 dB/3.46 dB and reasonable isolations of 21.7 dB/19.1 dB for TX/RX modes, respectively. These excellent results were achieved by applying an LC resonator and stacked high-voltage asymmetric MOS transistors in a standard 0.18- $\mu \text{m}$ CMOS process.

中文翻译：

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大功率开关使用 液相色谱 适用于5G应用的谐振器和非对称MOS晶体管

基于Si的串联分流发送/接收（TX / RX）开关，具有高功率1 dB压缩点（ $ P _ {\文本{1 dB}} $ 在5 GHz通讯的28 GHz频率下演示了29.2 dBm的频率）。对于TX / RX模式，拟议的开关还具有2.86 dB / 3.46 dB的低插入损耗和21.7 dB / 19.1 dB的合理隔离度。这些出色的结果是通过应用液相色谱 谐振器和堆叠式高压非对称MOS晶体管，采用标准0.18- $ \ mu \ text {m} $ CMOS工艺。