Ruddlesden–Popper (RP) phase Sr₂TiO₄ thin film is deposited successfully on FTO/glass substrate by spin coating. X-ray diffraction (XRD) pattern shows high-intensity (00 l) (l = 2, 4, and 6) peaks. The device shows bipolar resistive switching (RS) effect. Analysis on current–voltage (I-V) characteristic shows that conduction mechanism is dominated by Schottky emission in both low resistive state (LRS) and high resistive state (HRS). A variation (~0.12 eV) in Schottky barrier height (SBH) is observed between HRS and LRS. Thus, RS at electrode-Sr₂TiO₄ interface is the main mechanism. In general, variation of SBH is induced by accumulation of interfacial charges. Polarization-voltage (P-V) measurement shows hysteresis loop, which indicates the accumulation of interfacial charges. Formation and migration of charged oxygen vacancies and ions is proposed to be a possible mechanism of interfacial charges accumulation. This study paves the avenue for exploring RS application based on RP phase Sr₂TiO₄ perovskite oxide.

通过旋涂将Ruddlesden-Popper（RP）相Sr ₂ TiO ₄薄膜成功沉积在FTO /玻璃基板上。X射线衍射（XRD）模式显示出高强度（00  l）（l  = 2、4和6）峰。该器件显示了双极电阻切换（RS）效果。对电流-电压（IV）特性的分析表明，在低电阻状态（LRS）和高电阻状态（HRS）两者中，导电机理均受肖特基发射的影响。在HRS和LRS之间观察到了肖特基势垒高度（SBH）的变化（〜0.12 eV）。因此，电极Sr ₂ TiO ₄处的RS接口是主要机制。通常，SBH的变化是由界面电荷的积累引起的。极化电压（PV）的测量显示出磁滞回线，这表明界面电荷的积累。提出带电的氧空位和离子的形成和迁移是界面电荷积累的可能机制。本研究为探索基于RP相Sr ₂ TiO ₄钙钛矿氧化物的RS应用铺平了道路。