In this work, blue-green InGaN/GaN multiple quantum wells (MQWs) were grown on SiC substrates by metal-organic chemical vapor deposition. The influence of growth pressure on the structural and optical properties and surface morphology of the MQWs was studied. The photoluminescence measurement results indicate that the indium content in the MQWs nearly doubles when the growth pressure increases from 100 to 400 mbar, and the MQWs grown at different pressures exhibit distinct temperature-dependent optical behaviors. Meanwhile, the growth pressure also influences the structural characteristics of the MQWs significantly. Besides, with changing the growth pressure, the surface root-mean-square roughness, V-shaped pits density, V-shaped pits size, and localization state density of the MQWs were changed accordingly.

在这项工作中，通过金属有机化学气相沉积法在SiC衬底上生长了蓝绿色的InGaN / GaN多量子阱（MQW）。研究了生长压力对MQWs结构和光学性能以及表面形态的影响。光致发光测量结果表明，当生长压力从100 mbar增加到400 mbar时，MQWs中的铟含量几乎翻倍，并且在不同压力下生长的MQW表现出不同的温度依赖性光学行为。同时，生长压力也极大地影响了MQW的结构特性。此外，随着生长压力的改变，MQW的表面均方根粗糙度，V形凹坑密度，V形凹坑大小和定位状态密度也随之改变。