Synthesized graphene (Gr) on metal substrates that requires additional surface-to-surface transfer procedure to form Gr-on-silicon (Gr-Si) Schottky-junction configuration, which in turn results in the photovoltaic degradation caused by both mechanical damages and chemical contaminations during several wet chemical steps. This current issue has motivated us to develop alternative Schottky-junction configuration using silver nanowires (AgNWs) covering nitrogen (N)-doped amorphous carbon (a-C) films annealed in the temperature range 750–900 °C. Compared to the Schottky-junction Si solar cell based on 900 °C annealed N-doped a-C films (C_N-900-Si) with only Ag grid, all of AgNWs-C_N-900-Si solar cells exhibit the significant enhancement of photovoltaic characteristics. Consequently, the remarkable power conversion efficiency (PCE) of 6.17% is achieved on 0.2 wt% AgNWs-C_N-900-Si solar cell, which is far superior to that of the C_N-900-Si solar cell with only Ag grid (~0.13%). Furthermore, the 0.2 wt% AgNWs-C_N-900-SiNWs solar cell shows the highest short-circuit current density (J_SC) of 23.42 mA/cm² and PCE of 7.67%, which is a PCE enhancement of ~24% when compared to the 0.2 wt% AgNWs-C_N-900-Si solar cell. This study demonstrates that AgNWs network can accelerate the charge carrier extraction from Schottky-contact between C_N-900 and n-Si substrate, leading to greatly reduced series resistance that results in significantly enhanced photovoltaic characteristics.

在金属基材上合成石墨烯（Gr），需要额外的表面到表面转移程序以形成硅上Gr（Gr-Si）肖特基结构型，这又会导致由机械损伤和化学作用引起的光伏退化几个湿化学步骤中的污染物。当前的问题促使我们使用覆盖在750-900°C温度范围内退火的掺氮（N）的非晶碳（a- C）膜的银纳米线（AgNWs）开发替代的肖特基结配置。与基于900°C退火且仅具有Ag栅的N掺杂aC膜（C _N-900 -Si）的肖特基结Si太阳能电池相比，所有的AgNWs-C _N-900-Si太阳能电池展现出光伏特性的显着增强。因此，在0.2 wt％的AgNWs -C _N-900 -Si太阳能电池上，可实现6.17％的出色功率转换效率（PCE），远远优于仅具有Ag栅的C _N-900 -Si太阳能电池（〜0.13％）。此外，0.2 wt％的AgNWs -C _N-900 -SiNWs太阳能电池显示出最高的短路电流密度（J _SC）为23.42 mA / cm ²和PCE为7.67％，当PCE增强时约为24％与0.2 wt％的AgNWs -C _N-900相比-硅太阳能电池。这项研究表明，AgNWs网络可以加速从C _N-900和n-Si衬底之间的肖特基接触中提取载流子，从而导致串联电阻大大降低，从而显着增强光伏特性。